Výsledky vyhledávání - "Sonde Sushant"

Akademický článek

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Autor: Yakimova Rositza, Rambach Martin, Vecchio Carmelo, Sonde Sushant, Bongiorno Corrado, Raineri Vito, Giannazzo Filippo

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 269 (2011)

Abstract In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (Tgr from 1600 to 2000°C).

Externí odkaz: https://doaj.org/article/abd9318edd7f4475809e41a85428f889

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Akademický článek

Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Autor: Giannazzo Filippo, Sonde Sushant, Rimini Emanuele, Raineri Vito

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 109 (2011)

Abstract In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the ele

Externí odkaz: https://doaj.org/article/e1e1957a65a148c3b71b8965665c4398

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Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Autor: Ge, Ruijing, Wu, Xiaohan, Kim, Myungsoo, Chou, Harry, Sonde, Sushant, Tao, Li, Lee, Jack C., Akinwande, Deji

Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se) transitio

Externí odkaz: http://arxiv.org/abs/1709.04592

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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

Autor: Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C. P., Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F., Tutuc, Emanuel, Banerjee, Sanjay K.

Publikováno v: Nano Lett., 2015, 15(7), pp 4329-4336

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring var

Externí odkaz: http://arxiv.org/abs/1604.06850

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Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

Autor: Trivedi, Tanuj, Sonde, Sushant, Movva, Hema C. P., Banerjee, Sanjay K.

Publikováno v: J. Appl. Phys. 119, 055706 (2016)

We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ an

Externí odkaz: http://arxiv.org/abs/1601.05789

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Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

Autor: Movva, Hema C. P., Ramón, Michael E., Corbet, Chris M., Sonde, Sushant, Chowdhury, Sk. Fahad, Carpenter, Gary, Tutuc, Emanuel, Banerjee, Sanjay K.

Publikováno v: Appl. Phys. Lett. 101, 183113 (2012)

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in devi

Externí odkaz: http://arxiv.org/abs/1210.5535

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