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pro vyhledávání: '"Sonam Rewari"'
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Autor:
Sia Batra, Sonam Rewari
Publikováno v:
Journal of Electronic Materials. 52:3604-3612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4bd0834dc6476c1ee1e2aa999cad4dc
https://doi.org/10.1007/s11664-023-10240-0
https://doi.org/10.1007/s11664-023-10240-0
Publikováno v:
Journal of Computational Electronics. 22:742-759
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15eb80e01e27a18363d93db898fb137
https://doi.org/10.1007/s10825-023-02008-w
https://doi.org/10.1007/s10825-023-02008-w
Publikováno v:
Arabian Journal for Science and Engineering. 48:907-917
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d938951aa3c532339575e747a6f03e8b
https://doi.org/10.1007/s13369-022-07200-x
https://doi.org/10.1007/s13369-022-07200-x
Publikováno v:
Journal of Electronic Materials. 51:5609-5616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba9f5de9db2c4814f58fb2fd8a965e2
https://doi.org/10.1007/s11664-022-09795-1
https://doi.org/10.1007/s11664-022-09795-1
A Gate Engineered Ferroelectric Junctionless BioFET is proposed and investigated for label-free detection of various biomolecules. A nanocavity is created by etching a part of the gate oxide material on the top and bottom of the device, which allows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74084ce07f59d189a64bfa38aebbd0de
https://doi.org/10.21203/rs.3.rs-2880988/v1
https://doi.org/10.21203/rs.3.rs-2880988/v1
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94f616e3d94662bb1d07512c8abcb2a
https://doi.org/10.1109/devic57758.2023.10134819
https://doi.org/10.1109/devic57758.2023.10134819
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8478705a67cc55b00c8208605b180a79
https://doi.org/10.1002/jnm.3106
https://doi.org/10.1002/jnm.3106
Publikováno v:
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences. 479
Ferroelectric interfaced negative capacitance field effect transistors are gaining popularity for low power applications; however, as temperature is a constant influencing factor, further study is required to comprehend how these devices are influenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fe4f5abf5f3a24b39f01b429113394
https://doi.org/10.1098/rspa.2022.0528
https://doi.org/10.1098/rspa.2022.0528
Publikováno v:
Silicon. 14:9733-9749
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4280aaa85d1d507144499521a488fae8
https://doi.org/10.1007/s12633-022-01663-1
https://doi.org/10.1007/s12633-022-01663-1