Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sonali N. Chopra"'
Autor:
Sumit Agarwal, Martijn F. J. Vos, Adriaan J. M. Mackus, John G. Ekerdt, Marcel A. Verheijen, Sonali N. Chopra, Wilhelmus M. M. Kessels
Publikováno v:
Chemistry of Materials, 31(11), 3878-3882. American Chemical Society
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::445b12d180de280c4cde4c6a6650c1d7
https://doi.org/10.1021/acs.chemmater.9b00193
https://doi.org/10.1021/acs.chemmater.9b00193
Autor:
Sumit Agarwal, John G. Ekerdt, Adriaan J. M. Mackus, Martijn F. J. Vos, Sonali N. Chopra, Wilhelmus M. M. Kessels
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 39(3):032412. AVS Science and Technology Society
For future sub-5 nm technology nodes, the fabrication of semiconductor devices will likely involve the use of area-selective atomic layer deposition (ALD). While area-selective ALD processes have been reported for a variety of materials, most approac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edc3494a4bb93c3f8984656437c78e0c
http://www.scopus.com/inward/record.url?scp=85103879152&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85103879152&partnerID=8YFLogxK
Autor:
Marcel A. Verheijen, Sonali N. Chopra, Martijn F. J. Vos, John G. Ekerdt, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 38(6):062402. AVS Science and Technology Society
Atomic layer deposition (ALD) of ruthenium is of interest for various applications in nanoelectronics and is currently gaining attention for its potential role in interconnect technology in future technology nodes. This work provides insights into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2514c217f6b7e6016959614ef712e811
http://www.scopus.com/inward/record.url?scp=85092639693&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85092639693&partnerID=8YFLogxK
Publikováno v:
Chemistry of Materials. 28:4928-4934
This work targets the area selective atomic layer deposition (AS-ALD) of TiN onto HfO2 for use as the word line in a memory device. Unlike other patterning processes, AS-ALD eliminates etching steps and also allows for growth of patterned films with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5fc8b9e2b15f14682a6d7f1d7e95b4c
https://doi.org/10.1021/acs.chemmater.6b01036
https://doi.org/10.1021/acs.chemmater.6b01036
Autor:
John G. Ekerdt, Rajesh A. Rao, Sonali N. Chopra, Sanjay K. Banerjee, Yujia Zhai, Leonard F. Register, Marylene Palard, Leo Mathew
Publikováno v:
IEEE Transactions on Electron Devices. 61:3896-3900
We present a vertical gate-all-around Si nanowire (SiNW) metal–oxide–semiconductor field-effect transistor with high- \(\kappa \) dielectric and TiN metal gate. The process flow is fully compatible with CMOS technologies. SiNWs are fabricated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f799a30ae6c21b7033f1fcef44e3046a
https://doi.org/10.1109/ted.2014.2353658
https://doi.org/10.1109/ted.2014.2353658
Publikováno v:
The Journal of Physical Chemistry C. 116:26422-26430
Methods for passivating the germanium surface must be developed in order to fully exploit its electrical properties in devices. Passivation by formation of Ge–S bonds has proven most effective to date, spurring interest in adsorption of sulfur-cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf09fa19b3c2b59c600491930090b15
https://doi.org/10.1021/jp309418e
https://doi.org/10.1021/jp309418e