Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sonali Baral"'
Autor:
Nisha Shahi, Ajit K. Jena, Gaurav K. Shukla, Vishal Kumar, Shivani Rastogi, K. K. Dubey, Indu Rajput, Sonali Baral, Archana Lakhani, Seung-Cheol Lee, Satadeep Bhattacharjee, Sanjay Singh
Publikováno v:
Physical Review B. 106
Autor:
Gaurav K. Shukla, Ajit K. Jena, Nisha Shahi, K. K. Dubey, Indu Rajput, Sonali Baral, Kavita Yadav, K. Mukherjee, Archana Lakhani, Karel Carva, Seung-Cheol Lee, Satadeep Bhattacharjee, Sanjay Singh
Publikováno v:
Physical review / B 105(3), 035124 (2022). doi:10.1103/PhysRevB.105.035124
Physical review / B 105(3), 035124 (2022). doi:10.1103/PhysRevB.105.035124
Co$_2$-based Heusler compounds are promising materials for spintronics applications due to their high Curie temperature, large spin polarization, large magnetization dens
Co$_2$-based Heusler compounds are promising materials for spintronics applications due to their high Curie temperature, large spin polarization, large magnetization dens
Publikováno v:
Materials Today Communications. 33:104537
Autor:
Sonali Baral, Archana Lakhani
Publikováno v:
AIP Conference Proceedings.
We have grown single crystal of SnTe using modified Bridgman method. Sample is characterized by XRD and FESEM measurements. SnTe is a degenerated semiconductor which shows metallic behavior in absence of magnetic field. Here we report the magnetotran
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 16:2100542
We report a comprehensive magneto-transport study on single crystalline p-type topological crystalline insulator (TCI) SnTe, across the cubic-to-rhombohedral (R3m) transition which occurs as a function of temperature. The electrical resistivity of a
Autor:
Archana Lakhani, Sonali Baral
Publikováno v:
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019.
We report the single crystal growth and characterization of crystalline topological insulator SnTe with XRD, SEM, EDX and resistivity measurements. We have grown SnTe single crystal by modified Bridgman method. X-ray diffraction analysis shows the or
Publikováno v:
2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC).
Lanthanum Oxide thin film was synthesized using Polyvinyl Alcohol (PVA) to understand its microwave interaction. The experiment was performed in the X-Band under the frequency range of (9-11.5 GHz) for understanding various materialistic and microwav