Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sonalee Kapoor"'
Autor:
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125231-125231-5 (2019)
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky
Externí odkaz:
https://doaj.org/article/f70925930d7a41f7bb2d3583c770d973
Publikováno v:
Solid State Electronics Letters, Vol 1, Iss 1, Pp 30-37 (2019)
This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4 mA to 28 mA, when un-passivated gap increased from 200 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94001cc147c14c296b98a888f2a89ed7
https://doi.org/10.1016/j.ssel.2019.04.002
https://doi.org/10.1016/j.ssel.2019.04.002
Autor:
Ajay Kumar Visvkarma, Robert Laishram, Sonalee Kapoor, D S Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
Semiconductor Science and Technology. 37:085006
This article reports a Ti/Al-based ohmic contact utilizing a thin interfacial Au layer for improved morphology, edge acuity and low contact resistance for applications to III-Nitride high electron mobility transistors (HEMTs). Conventional Ti/Al cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c9b258e67f2f77846104cbbde3654e
https://doi.org/10.1088/1361-6641/ac6f79
https://doi.org/10.1088/1361-6641/ac6f79
Autor:
Somna S. Mahajan, Rupesh K. Chaubey, Seeema Vinayak, Dipendra Singh Rawal, Hemant Kumar Saini, Sonalee Kapoor, Robert Laishram
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
GaN/AlGaN based High Electron Mobility Transistors (HEMTs) are being widely developed and used for variety of microwave power applications due to their superior electron transport properties. In the present study, effect of HCl pre-metal dip followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e53a67be54868a7f4ff3db2ec0580d
https://doi.org/10.1007/978-3-319-97604-4_30
https://doi.org/10.1007/978-3-319-97604-4_30
Autor:
Robert Laishram, Ajay Kumar Visvkarma, Rajeev Kumar Sawal, Dipendra Singh Rawal, Sonalee Kapoor, Hemant Kumar Saini
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
Nichrome thin films were deposited by Radio Frequency (RF) magnetron sputtering with variable RF power and argon gas pressure at room temperature. It was found that the sheet resistance (Rsh) varied with different deposition parameters. Energy Disper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402f355cedb36d09e13ca34aeba81d4f
https://doi.org/10.1007/978-3-319-97604-4_31
https://doi.org/10.1007/978-3-319-97604-4_31
Autor:
B. K. Sehgal, Anuradha Dhaul, Somna S. Mahajan, Robert Laishram, Seema Vinayak, Sonalee Kapoor
Publikováno v:
Materials Science and Engineering: B. 183:47-53
In this work, ohmic contacts were formed by varying the Ti/Al thickness ratio in the metal stack of Ti/Al/Ni/Au on Al .28 Ga .72 N/GaN HEMT epistructure followed by annealing in the temperature range 740–860 °C by rapid thermal processor (RTP). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca1a51c996a40870d7105b31b32e91d
https://doi.org/10.1016/j.mseb.2013.12.005
https://doi.org/10.1016/j.mseb.2013.12.005
Autor:
Mr Amit, Dipendra Singh Rawal, Sunil Sharma, Sonalee Kapoor, Robert Liashram, Rupesh K. Chaubey, Seema Vinayak, Rajesh K. Sharma
Publikováno v:
Defence Science Journal. 68:290
The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b5309dfc1c161039c73efeeb1ab477
https://doi.org/10.14429/dsj.68.12134
https://doi.org/10.14429/dsj.68.12134
Autor:
Sindhu Dayal, Sunil Sharma, Seema Vinayak, Sonalee Kapoor, Henika Arora, Anushree Tomer, Dipendra Singh Rawal
Publikováno v:
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).
The role of SiN x passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23f149d17f64d440c3bb24ca03a2a957
https://doi.org/10.1109/icemelec.2014.7151172
https://doi.org/10.1109/icemelec.2014.7151172
Autor:
B. K. Sehgal, Somna S. Mahajan, Robert Laishram, Sonalee Kapoor, Anushree Tomar, Amit Mailk, Seema Vinayak, A. A. Naik
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Ni/Au Schottky contacts to AlGaN/GaN HEMT were formed by E-beam evaporation technique and lift-off process. The contacts were Rapid thermal annealed at 300 °C for duration of 2–10 min. A significant suppression in gate leakage current was observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0447b070260cdcc0b6a99495960fe0ea
https://doi.org/10.1007/978-3-319-03002-9_37
https://doi.org/10.1007/978-3-319-03002-9_37
Autor:
Ajay Kumar Visvkarma, Robert Laishram, Sonalee Kapoor, D S Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
Semiconductor Science & Technology; Oct2019, Vol. 34 Issue 10, p1-1, 1p