Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sonachand Adhikari"'
Autor:
Bikesh Gupta, Parul, Yonghwan Lee, Joshua Zheyan Soo, Sonachand Adhikari, Olivier Lee Cheong Lem, Chennupati Jagadish, Hark Hoe Tan, Siva Karuturi
Publikováno v:
Small Science, Vol 4, Iss 12, Pp n/a-n/a (2024)
III‐V semiconductors are favoured photo absorber materials for solar energy conversion due to their ideal bandgap, yet their high‐cost hinders widespread adoption. Utilizing thin films of these semiconductors presents a viable way to address the
Externí odkaz:
https://doaj.org/article/40df4cf013534150923a4e64ede5c1fc
Publikováno v:
Nanoscale Horizons. 8:530-542
SEM image of an array of GaN/AlGaN core–shell nanowires and cathodoluminescence from the AlGaN MQWs incorporated in the nanowire sidewalls (pseudo-colored).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d422e4e5a6950364672f4505b7184b
https://doi.org/10.1039/d2nh00500j
https://doi.org/10.1039/d2nh00500j
Publikováno v:
Crystal Growth & Design. 22:5345-5353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc8953b542f21072f0c490916cfa48b5
https://doi.org/10.1021/acs.cgd.2c00453
https://doi.org/10.1021/acs.cgd.2c00453
Autor:
Sonachand Adhikari, Olivier Lee Cheong Lem, Felipe Kremer, Kaushal Vora, Frank Brink, Mykhaylo Lysevych, Hark Hoe Tan, Chennupati Jagadish
Publikováno v:
Nano Research. 15:7670-7680
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9d16e44fd077f5a6555452931f733fc
https://doi.org/10.1007/s12274-022-4403-6
https://doi.org/10.1007/s12274-022-4403-6
Autor:
Jennifer Wong-Leung, Mykhaylo Lysevych, Chennupati Jagadish, Dipankar Chugh, Hark Hoe Tan, Sonachand Adhikari
Publikováno v:
Crystal Growth & Design. 20:1811-1819
Aluminum nitride was grown on two-dimensional hexagonal boron nitride (hBN) and sapphire substrates using metal organic vapor phase epitaxy. hBN itself was first deposited directly on 2" sapphire ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71005a95b9ffdcc237b5a43fae800351
https://doi.org/10.1021/acs.cgd.9b01543
https://doi.org/10.1021/acs.cgd.9b01543
Autor:
Nikita Gagrani, Kaushal Vora, Sonachand Adhikari, Yuxin Jiang, Chennupati Jagadish, Hark Hoe Tan
Publikováno v:
Advanced Optical Materials. 10:2102690
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf6c358705cfcc37f91059333b1a3120
https://doi.org/10.1002/adom.202102690
https://doi.org/10.1002/adom.202102690
Publikováno v:
Materials Research Bulletin. 140:111258
The lighting industry undergoes a revolutionizing transformation with the introduction of III-nitride semiconductors, and "LEDs" became a household name. The solid-state light source GaN/InGaN replaced incandescent and compact fluorescent lamps. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398fa265e784c08cf29497e1b7d78b31
https://doi.org/10.1016/j.materresbull.2021.111258
https://doi.org/10.1016/j.materresbull.2021.111258
Publikováno v:
Superlattices and Microstructures. 107:127-135
The effectiveness of polarization matching layer (PML) between i-InGaN/p-GaN is studied numerically for Ga-face InGaN/GaN p-i-n solar cell at low p-GaN doping (∼5e17 cm −3 ). The simulations are performed for four In x Ga 1-x N/GaN heterostructur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36717193e95edf84a3230c4a37b70450
https://doi.org/10.1016/j.spmi.2017.04.014
https://doi.org/10.1016/j.spmi.2017.04.014
Autor:
Prabir Pal, Arun Barvat, Nisha Prakash, Dilip K. Singh, K.K. Maurya, Kritika Anand, Suraj P. Khanna, Mukesh Jewariya, Sonachand Adhikari, Srinivasa Ragam
Publikováno v:
Optical Materials. 54:26-31
In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656fd043bd275ace4ba9e129eb8c009d
https://doi.org/10.1016/j.optmat.2016.02.012
https://doi.org/10.1016/j.optmat.2016.02.012
Publikováno v:
Superlattices and Microstructures. 88:344-353
Polarization-matched graded AlInGaN electron blocking layer (EBL) and hole blocking layer (HBL) are proposed to reduce efficiency droop in GaN-InGaN light-emitting diodes (LEDs). Five different structures have been simulated to study the effect of di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8c57607bcf80269a6c1eb6b082eb31
https://doi.org/10.1016/j.spmi.2015.09.025
https://doi.org/10.1016/j.spmi.2015.09.025