Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Son Phuong Le"'
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075002-075002-7 (2023)
We investigated the electron transport properties of n-GaN under an Ohmic-metal. Hall measurement results were compared for n-GaN (A) before Ti-based metal deposition, (B) after Ti-based metal deposition but before annealing, (C) after Ohmic annealin
Externí odkaz:
https://doaj.org/article/7115eee2755542439980265440809d63
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 055303-055303-8 (2017)
We fabricated and investigated an InAs/high-k/low-k structure in comparison with an InAs/low-k structure, where the former and the latter are respectively obtained by bonding of InAs/Al2O3/AlN and InAs on low-k flexible substrates (FS). The InA
Externí odkaz:
https://doaj.org/article/28c0adf5df1149a5a69ffc0634a5506b
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a07dcff4b8a67c8c6be3cedd3164a71
https://doi.org/10.1007/s00339-022-05865-7
https://doi.org/10.1007/s00339-022-05865-7
Publikováno v:
Journal of Applied Physics; 2018, Vol. 123 Issue 3, p034504-1-034504-7, 7p, 2 Diagrams, 8 Graphs
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d46d532ffea2597c5456623592552cf
https://doi.org/10.7567/ssdm.2020.e-2-05
https://doi.org/10.7567/ssdm.2020.e-2-05
Publikováno v:
Journal of Applied Physics; 5/28/2016, Vol. 119 Issue 20, p204503-1-204503-6, 6p, 1 Diagram, 10 Graphs
Autor:
Toshi-kazu Suzuki, Son Phuong Le
Publikováno v:
Applied Physics Letters. 118:182101
Electron transport properties in InAs films epitaxially grown on GaAs(001), InAs/GaAs(001) heterostructures, were systematically investigated through the dependence on crystal direction, thickness, and temperature. As a result, we found a pronounced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b63346a2634fcb7049507f8a4789d76
https://doi.org/10.1063/5.0039748
https://doi.org/10.1063/5.0039748
Publikováno v:
Applied Physics Letters. 118:142102
GaN-based pyramidal quantum structures, InGaN nanostructures located on top of micro-sized GaN pyramids, were fabricated by selective-area growth on SiC substrates by means of hot-wall metal-organic chemical vapor deposition. Arrays of GaN-based pyra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb055c67510a2423414df7a24cdcaccc
https://doi.org/10.1063/5.0048684
https://doi.org/10.1063/5.0048684
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 5, p054510-1-054510-8, 8p
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