Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Son, Nguyen T."'
Autor:
Zwier, Olger V., Bosma, Tom, Gilardoni, Carmem M., Yang, Xu, Onur, Alexander R., Ohshima, Takeshi, Son, Nguyen T., van der Wal, Caspar H.
Publikováno v:
Journal of Applied Physics 131, 094401 (2022)
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (n
Externí odkaz:
http://arxiv.org/abs/2203.09869
Autor:
Bosma, Tom, Hendriks, Joop, Ghezellou, Misagh, Son, Nguyen T., Ul-Hassan, Jawad, van der Wal, Caspar H.
Publikováno v:
Journal of Applied Physics 131, 025703 (2022)
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms,
Externí odkaz:
http://arxiv.org/abs/2202.10932
Autor:
Anderson, Christopher P., Glen, Elena O., Zeledon, Cyrus, Bourassa, Alexandre, Jin, Yu, Zhu, Yizhi, Vorwerk, Christian, Crook, Alexander L., Abe, Hiroshi, Ul-Hassan, Jawad, Ohshima, Takeshi, Son, Nguyen T., Galli, Giulia, Awschalom, David D.
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby
Externí odkaz:
http://arxiv.org/abs/2110.01590
Autor:
Bourassa, Alexandre, Anderson, Christopher P., Miao, Kevin C., Onizhuk, Mykyta, Ma, He, Crook, Alexander L., Abe, Hiroshi, Ul-Hassan, Jawad, Ohshima, Takeshi, Son, Nguyen T., Galli, Giulia, Awschalom, David D.
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically a
Externí odkaz:
http://arxiv.org/abs/2005.07602
Autor:
Anderson, Christopher P., Bourassa, Alexandre, Miao, Kevin C., Wolfowicz, Gary, Mintun, Peter J., Crook, Alexander L., Abe, Hiroshi, Hassan, Jawad Ul, Son, Nguyen T., Ohshima, Takeshi, Awschalom, David D.
Publikováno v:
Science 366, 1225 (2019)
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent sin
Externí odkaz:
http://arxiv.org/abs/1906.08328
Akademický článek
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Autor:
Casas, Charles F. de las, Christle, David J., Hassan, Jawad Ul, Ohshima, Takeshi, Son, Nguyen T., Awschalom, David D.
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber
Externí odkaz:
http://arxiv.org/abs/1710.10705
Autor:
Christle, David J., Klimov, Paul V., Casas, Charles F. de las, Szász, Krisztián, Ivády, Viktor, Jokubavicius, Valdas, Hassan, Jawad ul, Syväjärvi, Mikael, Koehl, William F., Ohshima, Takeshi, Son, Nguyen T., Janzén, Erik, Gali, Ádám, Awschalom, David D.
Publikováno v:
Phys. Rev. X 7, 021046 (2017)
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanis
Externí odkaz:
http://arxiv.org/abs/1702.07330
Autor:
Christle, David J., Falk, Abram L., Andrich, Paolo, Klimov, Paul V., Hassan, Jawad ul, Son, Nguyen T., Janzén, Erik, Ohshima, Takeshi, Awschalom, David D.
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are inc
Externí odkaz:
http://arxiv.org/abs/1406.7325
Autor:
Son, Nguyen T., Ivanov, Ivan G.
Publikováno v:
Journal of Applied Physics; 6/7/2021, Vol. 129 Issue 21, p1-8, 8p