Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Somsubhra Chakrabarti"'
Autor:
Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong-Yi Wu, Kanishk Singh, Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian-Tai Qiu, Hsin-Ming Cheng, Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra, Jer-Ren Yang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-13 (2017)
Abstract Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphou
Externí odkaz:
https://doaj.org/article/080a525a617d43608c3a44854fe7ad6f
Autor:
Somsubhra Chakrabarti
105
Recently, resistive random access memory (RRAM) has become a promising candidate to replace three dimensional (3D)FLASH for cross-bar applications at a low cost owing to its simple structure, low power consumption, and high-speed operation.
Recently, resistive random access memory (RRAM) has become a promising candidate to replace three dimensional (3D)FLASH for cross-bar applications at a low cost owing to its simple structure, low power consumption, and high-speed operation.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83z6q6
Autor:
Wen Siang Lew, Putu Andhita Dananjaya, Eng Huat Toh, Samuel C. W. Chow, Kuan Hong Tan, Desmond Jia Jun Loy, Somsubhra Chakrabarti
Publikováno v:
ACS Applied Electronic Materials. 2:3160-3170
We report a switching model that directly explains the change in activation energy (EAC) at different RESET stop voltages (Vstop) in HfO2-based resistive random access memory devices. The dependenc...
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Autor:
Yong Chiang Ee, Kunqi Hou, Jia Rui Thong, Desmond Loy Jia Jun, Jia Min Ang, Somsubhra Chakrabarti, Mun Yin Chee, Putu Andhita Dananjaya, Wen Siang Lew
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this paper, study on the thermal annealing effect is done on nanoscale W/TaO x /Pt resistive random access memory (RRAM) structure. Electrical characterization shows that device performance is improved after undergoing thermal annealing, with the
Autor:
Samuel Chow Chen Wai, Wen Siang Lew, Somsubhra Chakrabarti, Jia Min Ang, Jia Rui Thong, Kunqi Hou, Mun Yin Chee, Desmond Loy Jia Jun, Putu Andhita Dananjaya, Yong Chiang Ee
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this paper, conductance switching behavior of Pt/HfOx/Ti redox-based memristive devices has been thoroughly investigated. The conduction mechanisms involved during the device operation can be associated with the trap-controlled SCL conduction mech
Autor:
Sourav Roy, Debanjan Jana, Ya Ling Chang, Anisha Roy, Hsin Ming Cheng, Rajeswar Panja, Rajat Mahapatra, Mrinmoy Dutta, Jian Tai Qiu, Jer-Ren Yang, Somsubhra Chakrabarti, Subhranu Samanta, Siddheswar Maikap, Ling Na Tsai, Sreekanth Ginnaram
Publikováno v:
Applied Surface Science. 433:51-59
Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer
Autor:
Hsin Ming Cheng, Rajeswar Panja, Surajit Jana, Siddheswar Maikap, Sourav Roy, Subhranu Samanta, Mrinmoy Dutta, Sreekanth Ginnaram, Ling Na Tsai, S. Z. Rahaman, Anisha Roy, Somsubhra Chakrabarti, Samit K. Ray, Amit Prakash, Jian Tai Qiu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Scientific Reports
Scientific Reports
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/G
Autor:
Sreekanth Ginnaram, Siddheswar Maikap, Hsien-Chin Chiu, Jer-Ren Yang, Ya Ling Chang, Surajit Jana, Hsin Ming Cheng, Somsubhra Chakrabarti, Rajat Mahapatra, Kanishk Singh, Mrinmoy Dutta, Pankaj Kumar, Subhranu Samanta, Anisha Roy, Jian Tai Qiu, Debanjan Jana
Publikováno v:
Journal of The Electrochemical Society. 164:B127-B135
Autor:
Subhranu Samanta, Somsubhra Chakrabarti, Jian Tai Qiu, Anisha Roy, Surajit Jana, Siddheswar Maikap
Publikováno v:
Physical Chemistry Chemical Physics. 19:25938-25948
The resistive switching characteristics of a scalable IrOx/Al2O3/W cross-point structure and its mechanism for pH/H2O2 sensing along with glucose detection have been investigated for the first time. Porous IrOx and Ir3+/Ir4+ oxidation states are obse