Zobrazeno 1 - 10
of 167
pro vyhledávání: '"Somsak Panyakeow"'
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025318-025318-6 (2019)
This research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates
Externí odkaz:
https://doaj.org/article/70bf9ae0700d4e5daf562d396af8751c
Autor:
Matasit Chikumpa, Zon, Supachok Thainoi, Suwit Kiravittaya, Aniwat Tandaechanurat, Noppadon Nuntawong, Suwat Sopitpan, Visittapong Yordsri, Chanchana Thanachayanont, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow
Publikováno v:
Materials Research Express, Vol 7, Iss 10, p 105007 (2020)
InSb/Al _x ln _1− _x Sb superlattices (SLs) are grown by molecular beam epitaxy on (001) InSb substrate and Raman scattering spectroscopy of the samples under magnetic field is investigated. Al contents in AlInSb of the samples are varied. All samp
Externí odkaz:
https://doaj.org/article/a678b4743904404399136d622781dcaa
Autor:
Chalermchai Himwas, Visittapong Yordsri, Chanchana Thanachayanont, Saharat Chomdech, Wenich Pumee, Somsak Panyakeow, Songphol Kanjanachuchai
Publikováno v:
Nanoscale Advances; 2/7/2024, Vol. 6 Issue 3, p846-854, 9p
Autor:
Somsak Panyakeow, Zon, Sasipohn Prasertpalichat, Unchittha Prasatsap, Nutthaphat Thornyanadacha, Supachok Thainoi, Suwit Kiravittaya
Publikováno v:
Materials Today: Proceedings. 47:3425-3429
We investigate the variations of circuit parameters of photovoltaic (PV) cells containing self-assembled InSb and GaSb quantum dots. The solar cell samples are fabricated by conventional molecular beam epitaxy on (0 0 1) GaAs substrate. The current
Autor:
Kay Khaing Oo, Somsak Panyakeow, Samatcha Vorathamrong, Somchai Ratanathammaphan, Piyasarn Praserthdam
Publikováno v:
Materials Today: Proceedings. 23:685-689
We have demonstrated growth of GaAs nanowires directly on Si (111) substrates by Ga-assisted technique using molecular beam epitaxy. In this work, Ga droplet forming and nanowire growth are performed at the same substrate temperature. Effect of subst
Autor:
Nanthaphop Sridumrongsak, Chanyanuch Chevintulak, Chanchana Thanachayanont, Somsak Panyakeow, Unchittha Prasatsap, Suwit Kiravittaya, Aniwat Tandaechanurat, Visittapong Yordsri, Supachok Thainoi, Thanaphat Rakpaises
Publikováno v:
Materials Today: Proceedings. 23:767-776
We experimentally investigate the equivalent circuit parameters of hybrid quantum-dot (QD) solar cells consisted of InAs/GaAs and GaSb/GaAs QDs. The hybrid QD solar cell samples are fabricated by stacking one pair and three pairs of InAs/GaAs and GaS
Autor:
null Zon, Supachok Thainoi, Suwit Kiravittaya, Noppadon Nuntawong, Suwat Sopitpan, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow
Publikováno v:
Materials Science and Engineering: B. 285:115958
Autor:
Karn Rongrueangkul, Suwat Sopitpan, Aniwat Tandaechanurat, Panithan Srisinsuphya, R. Khanchaitham, Visittapong Yordsri, Chanchana Thanachayanont, Somsak Panyakeow, Songphol Kanjanachuchai, Supachok Thainoi, Suwit Kiravittaya, Noppadon Nuntawong, Somchai Ratanathammaphan
Publikováno v:
Journal of Crystal Growth. 514:36-39
Distinct InSb/InAs quantum nano-stripes possessing type-II band alignment with a broken gap are grown using molecular beam epitaxy with low substrate temperature and slow growth rate, aiming for light emission in a mid-infrared range. The quantum nan
Autor:
Somchai Ratanathammaphan, Chanchana Thanachayanont, R. Chumkaew, Suwat Sopitpan, Somsak Panyakeow, P. Lekwongderm, Songphol Kanjanachuchai, Noppadon Nuntawong, Visittapong Yordsri, Suwit Kiravittaya, Aniwat Tandaechanurat, Supachok Thainoi
Publikováno v:
Journal of Crystal Growth. 512:198-202
We report on the Raman spectroscopy of self-assembled InSb nano-stripes grown on (0 0 1) GaSb substrate by molecular beam epitaxy. The nano-stripes have a truncated pyramidal shape with the typical dimension of ∼150 × 200 × 25 nm3. Raman spectros