Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Somnath S. Nag"'
Autor:
T. Breedijk, D. Rogers, Maureen A. Hanratty, P. Mei, Ih-Chin Chen, Iqbal Ali, Jorge A. Kittl, Amitava Chatterjee, P. Nicollian, S. Murtaza, A. Amerasekera, Somnath S. Nag
Publikováno v:
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.
Autor:
Amitava Chatterjee, Ih-Chin Chen, J.D. Luttmer, Iqbal Ali, S. Aur, Kelly J. Taylor, Sean C. O'Brien, Somnath S. Nag
Publikováno v:
International Electron Devices Meeting. Technical Digest.
The dielectric material used to fill trenches in Shallow Trench Isolation (STI) of transistors, is key to device performance. This paper (a) evaluates the integration of currently available dielectric technologies and (b) designs an optimized process
Publikováno v:
International Electron Devices Meeting. Technical Digest.
Shallow trench isolation schemes using a LOCOS edge to avoid sharp corner effects are applied to 0.25 /spl mu/m and 0.18 /spl mu/m technologies. Two variations are studied. In the first case (Case A) a mini-LOCOS is grown and deglazed prior to trench
Autor:
Ih-Chin Chen, M. Hanratty, D. Rogers, Mahalingam Nandakumar, P. Mei, S. Sridhar, Ajith Amerasekera, Somnath S. Nag
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
The design of a shallow trench isolation (STI) for sub-0.13 /spl mu/m CMOS technologies is described in this paper. The areas addressed and key results of the STI are as follows. (a) A deep UV lithography with a surface imaging resist can define tren
Autor:
D. Rogers, Suhail Murtaza, Kelly J. Taylor, John Kuehne, Amitava Chatterjee, Doug Mercer, Mark E. Mason, Keith A. Joyner, Sean C. O'Brien, A. L. Esquivel, P. Mei, Ih-Chin Chen, Somnath S. Nag, S. Ashburn, Iqbal Ali
Publikováno v:
SPIE Proceedings.
This paper presents a study of the issues in integrating the pattern, fill, planarization and surface cleanup processes to design a shallow trench isolation (STI) flow suitable for 0.25 micrometers CMOS technologies. Technological choices and their e
Autor:
S. Murtaza, Keith A. Joyner, Sean C. O'Brien, Maureen A. Hanratty, Kelly J. Taylor, Doug Mercer, I.-C. Chen, Amitava Chatterjee, A. L. Esquivel, P. Mei, Somnath S. Nag, H. Marchman, D. Rogers, John Kuehne, G. Hames, S. Ashburn, Iqbal Ali, S. P. Kwok, Mark E. Mason
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:1936
This article presents a study of the issues in integrating the pattern, fill, planarization, and surface cleanup processes to design a shallow trench isolation (STI) flow suitable for 0.25 μm complementary metal–oxide semiconductor technologies. T
Autor:
Nag S; Medicinal Chemistry Division, Central Drug Research Institute, PO Box 173, Lucknow 226 001, India., Pathak R, Kumar M, Shukla PK, Batra S
Publikováno v:
Bioorganic & medicinal chemistry letters [Bioorg Med Chem Lett] 2006 Jul 15; Vol. 16 (14), pp. 3824-8. Date of Electronic Publication: 2006 May 02.