Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Somna S. Mahajan"'
Autor:
Brajesh S. Yadav, Hemant Kumar Saini, Somna S. Mahajan, Ami Naik, Abhishek Sharma, Alok Jain, Deepti Jain
Publikováno v:
Vacuum. 152:128-131
The present work involves a comparison of sequentially evaporated Ti/Pt/Au and Cr/Au p-ohmic contacts for high power laser diode fabrication. Subsequently, the contacts were annealed at 440 °C in furnace annealing under N2 ambient and their surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7647a91150202bf46065ea7aa87ce5da
https://doi.org/10.1016/j.vacuum.2018.03.006
https://doi.org/10.1016/j.vacuum.2018.03.006
Publikováno v:
Journal of the Korean Physical Society. 70:533-538
The electrical performances of unannealed and post gate-annealed AlGaN/GaN High Electron Mobility Transistors (HEMTs) were analyzed. A considerable improvement in HEMT parameters such as the drain source current (I ds ), transconductance (g m ), gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae657f8b3696071d585f2005df41c277
https://doi.org/10.3938/jkps.70.533
https://doi.org/10.3938/jkps.70.533
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
High power laser diodes are fabricated using two different etchants by wet etching method. Sidewall roughness of the stripe in two cases is extracted using AFM and scattering loss due to this roughness is calculated theoretically by using well establ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce6f2ec0280add5e63907d18754f7c8e
https://doi.org/10.1007/978-3-319-97604-4_146
https://doi.org/10.1007/978-3-319-97604-4_146
Autor:
Somna S. Mahajan, Rupesh K. Chaubey, Seeema Vinayak, Dipendra Singh Rawal, Hemant Kumar Saini, Sonalee Kapoor, Robert Laishram
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
GaN/AlGaN based High Electron Mobility Transistors (HEMTs) are being widely developed and used for variety of microwave power applications due to their superior electron transport properties. In the present study, effect of HCl pre-metal dip followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e53a67be54868a7f4ff3db2ec0580d
https://doi.org/10.1007/978-3-319-97604-4_30
https://doi.org/10.1007/978-3-319-97604-4_30
Autor:
B. K. Sehgal, Anuradha Dhaul, Somna S. Mahajan, Robert Laishram, Seema Vinayak, Sonalee Kapoor
Publikováno v:
Materials Science and Engineering: B. 183:47-53
In this work, ohmic contacts were formed by varying the Ti/Al thickness ratio in the metal stack of Ti/Al/Ni/Au on Al .28 Ga .72 N/GaN HEMT epistructure followed by annealing in the temperature range 740–860 °C by rapid thermal processor (RTP). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca1a51c996a40870d7105b31b32e91d
https://doi.org/10.1016/j.mseb.2013.12.005
https://doi.org/10.1016/j.mseb.2013.12.005
Autor:
Somna S. Mahajan, Sunil Sharma, A. A. Naik, B. K. Sehgal, Meena Mishra, R. K. Khatri, Dipendra Singh Rawal
Publikováno v:
2015 IEEE MTT-S International Microwave and RF Conference (IMaRC).
This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4mA to 28mA, when un-passivated gap increased from 200nm t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9768b75490b4c7bf2f66678868351152
https://doi.org/10.1109/imarc.2015.7411434
https://doi.org/10.1109/imarc.2015.7411434
Publikováno v:
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).
AlGaN/GaN HEMTs were post-gate-annealed at 300°C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f96658c5ff8d248266cb550129677dbc
https://doi.org/10.1109/icemelec.2014.7151173
https://doi.org/10.1109/icemelec.2014.7151173
Autor:
B. K. Sehgal, Somna S. Mahajan, Robert Laishram, Sonalee Kapoor, Anushree Tomar, Amit Mailk, Seema Vinayak, A. A. Naik
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
Ni/Au Schottky contacts to AlGaN/GaN HEMT were formed by E-beam evaporation technique and lift-off process. The contacts were Rapid thermal annealed at 300 °C for duration of 2–10 min. A significant suppression in gate leakage current was observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0447b070260cdcc0b6a99495960fe0ea
https://doi.org/10.1007/978-3-319-03002-9_37
https://doi.org/10.1007/978-3-319-03002-9_37
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
We report here the fabrication of ion implanted GaAs hyperabrupt varactor diode that can be integrated in MMIC process. Varactor diodes with constant sensitivity γ of 0.55–0.65 with Cmax/Cmin varying from 2.5 to 3.5 have been fabricated. Varactors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c87c8802739bc303c7e27492664a09a
https://doi.org/10.1007/978-3-319-03002-9_35
https://doi.org/10.1007/978-3-319-03002-9_35
Publikováno v:
Thin Solid Films. 302:250-255
The carbon bonding ratio in diamond-like carbon (DLC) thin films has been estimated from the e2 spectra obtained by spectroscopic ellipsometry. A method has been developed to find out the atomic fractions of sp3- and sp2-bonded carbon atoms by combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3b322106ff30a715679191cdb7c96b
https://doi.org/10.1016/s0040-6090(96)09519-3
https://doi.org/10.1016/s0040-6090(96)09519-3