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Publikováno v:
IEEE Transactions on Electron Devices. 68:4797-4800
The operation of reconfigurable field effect transistor (RFET) is governed by Schottky barrier, ungated regions as well as control and polarity gates. The inherent architecture of RFET, apart from lowering the effective drain bias, impedes the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd04b14e229a7efbac4c8c870ee6d8e1
https://doi.org/10.1109/ted.2021.3096500
https://doi.org/10.1109/ted.2021.3096500
