Zobrazeno 1 - 1
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pro vyhledávání: '"Somayeh Omrani"'
Publikováno v:
Superlattices and Microstructures. 120:578-587
In this paper, we propose and analyze three different nanowire FinFETs: Silicon, Germanium and SiGe nanowire FinFETs. We find that the logic performance parameters such as Ion/Ioff ratio and drain-induced barrier lowering (DIBL) in the silicon struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402bbb3292969fc7ea7bf21823f78751
https://doi.org/10.1016/j.spmi.2018.06.022
https://doi.org/10.1016/j.spmi.2018.06.022
