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Autor:
Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055027-055027-12 (2018)
Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate
Externí odkaz:
https://doaj.org/article/2f2c87cf1479491f8e1e9d43e3e971dc