Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Som N. Dahal"'
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 14:2000368
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::820a9b28cd904ce636d2b8f92ba3aea4
https://doi.org/10.1002/pssr.202000368
https://doi.org/10.1002/pssr.202000368
Publikováno v:
Journal of Visualized Experiments.
To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60512a9f4b4405d69bde587711070892
https://doi.org/10.3791/58292
https://doi.org/10.3791/58292
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
This work focuses on mitigating the damage from nanostructure fabrication using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE). Metal contamination and plasma damage are the two main factors to limit the Si wafer's min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad88601b9d2b5a374c367a556b9a5b61
https://doi.org/10.1109/pvsc.2018.8548297
https://doi.org/10.1109/pvsc.2018.8548297
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
This work focuses on exploring the ways to integrate III-V nanostructures on silicon to enhance the current silicon cell's efficiency by effective absorption and possibly using quantum mechanical phenomena such as MEG (multiple exciton generation) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cef4d464a7ac725591a2604a269e505
https://doi.org/10.1109/pvsc.2017.8366713
https://doi.org/10.1109/pvsc.2017.8366713
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb9a1f355e325f69720979993f62dde
https://doi.org/10.1109/pvsc.2016.7749674
https://doi.org/10.1109/pvsc.2016.7749674
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Various characterization techniques have historically been developed in order to screen potential induced degradation (PID)-susceptible cells, but those techniques require final solar cells. We present a new characterization technique for screening P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea22ecdb843a6811414752bae744b56d
https://doi.org/10.1109/pvsc.2016.7749741
https://doi.org/10.1109/pvsc.2016.7749741
Publikováno v:
Progress in Photovoltaics: Research and Applications. 18:233-239
Heterostructures that include self-assembled quantum dots (SAQDs) have been suggested as model systems for the realization of novel high efficiency solar cells such as those based on intermediate bands (IBs). The lattice mismatch in the epitaxial gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eff56f8af92c70ef619439cb44d7357e
https://doi.org/10.1002/pip.937
https://doi.org/10.1002/pip.937
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
Strongly Raman shifting silicon and diamond particles were investigated. Diffuse reflecting films were prepared with each particle system. The diffuse reflecting films provided the necessary long light path lengths for the observation of Raman scatte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f149707cb25c552612708e578dff0c1
https://doi.org/10.1109/pvsc.2012.6318117
https://doi.org/10.1109/pvsc.2012.6318117
Publikováno v:
SPIE Proceedings.
QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::076633eebf0461604af5a29d4469d4d6
https://doi.org/10.1117/12.910834
https://doi.org/10.1117/12.910834
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
We have investigated InAs quantum dots (QDs) on GaAsSb barrier layers. Low temperature photoluminescence (PL) for InAs/GaAsSb with various δ-doping levels is performed to observe interband transitions. PL spectra of heavily doped QD samples show tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af4d4ff74acf84c6501aa453f725b08
https://doi.org/10.1109/pvsc.2011.6186704
https://doi.org/10.1109/pvsc.2011.6186704