Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Solveig Rentrop"'
Autor:
Carsten Ronning, R. Strohmeyer, Barbara Abendroth, Dirk C. Meyer, Juliane Walter, Sibylle Gemming, Wolfram Münchgesang, Jura Rensberg, Solveig Rentrop, Hartmut Stöcker
Publikováno v:
Thin Solid Films. 577:134-142
The atomic layer deposition (ALD) of stoichiometric SrTiO 3 as well as layers with either Sr or Ti excess from the commercial precursors Bis(tri-isopropylcyclopentadienyl)-strontium Sr( i Pr 3 Cp) 2 , Tetrakis-(dimethylamido)titanium(IV) Ti[N(CH 3 )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a5af97f794d59f6e54b0dd34a7c405
https://doi.org/10.1016/j.tsf.2015.01.053
https://doi.org/10.1016/j.tsf.2015.01.053
Autor:
Florian Hanzig, T. Weling, Hartmut Stöcker, Alexander Schmid, R. Strohmeyer, T. Moebus, Solveig Rentrop, Juliane Hanzig, Barbara Abendroth, Dirk C. Meyer
Publikováno v:
Thin Solid Films. 550:53-58
Strontium titanate is a promising insulator material in resistance switching random access memories. Strontium titanate thin films are prepared by atomic layer deposition from bis(tri-isopropylcyclopentadienyl)-strontium (Sr(iPr3Cp)2), Tetrakis-(dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b43cefcc8cf7e40823313cfd36ca99
https://doi.org/10.1016/j.tsf.2013.10.043
https://doi.org/10.1016/j.tsf.2013.10.043
Autor:
Hartmut Stöcker, Barbara Abendroth, Solveig Rentrop, Theresa Moebus, Mykola Vinnichenko, R. Strohmeyer, Tobias Weling, Dirk C. Meyer
Publikováno v:
Thin Solid Films. 545:176-182
The atomic layer deposition (ALD) of TiO 2 from tetrakis(dimethylamino)titanium (TDMAT) and water was studied in the substrate temperature ( T S ) range of 120 °C to 330 °C. The effect of deposition temperatures on the resulting layer microstructur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50388106ac84e191b53af498b51bb4c7
https://doi.org/10.1016/j.tsf.2013.07.076
https://doi.org/10.1016/j.tsf.2013.07.076
Autor:
D. J. Keeble, S. Wicklein, G. S. Kanda, W. Egger, R. Dittmann, T. Zacherle, P. C. Schmidt, M. Martin, C. Xu, A. Sambri, S. Amoruso, R. A. Mackie, Barbara Abendroth, Juliane Hanzig, Hartmut Stöcker, Florian Hanzig, Ralph Strohmeyer, Solveig Rentrop, Uwe Mühle, Dirk C. Meyer, Christian Pithan, Hayato Katsu, Rainer Waser, Hiroshi Takagi, Xinzhi Chen, Julian R. Tolchard, Sverre M. Selbach, Tor Grande
Publikováno v:
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83841ec9a9547dcc9fe8f4d82628296
https://doi.org/10.1002/9783527667703.ch47
https://doi.org/10.1002/9783527667703.ch47
Autor:
Johannes Heitmann, Friederike Kersten, Alexander Schmid, Solveig Rentrop, Dirk C. Meyer, Barbara Abendroth
Publikováno v:
ECS Meeting Abstracts. :1353-1353
Nanocrystalline high-k dielectrics play a major role in semiconductor research and development. The semiconductor industry faces nanocrystalline dielectrics for MIM capacitors in DRAM devices [1] and rf applications, as well as for gate dielectrics i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86fcff4a8c48ec5c1fc8d65f9cadf120
https://doi.org/10.1149/ma2014-01/36/1353
https://doi.org/10.1149/ma2014-01/36/1353