Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Soltys, Jakub"'
Publikováno v:
Journal of Crystal Growth - August 2014; 401:869-73
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer a
Externí odkaz:
http://arxiv.org/abs/1209.4005
Autor:
Borysiuk, Jolanta, Sołtys, Jakub, Bożek, Rafal, Piechota, Jacek, Krukowski, Stanislaw, Strupinski, Wlodzimierz, Baranowski, Jacek M., Stepniewski, Roman
Publikováno v:
Physical Review B - 18 January 2012; 85: 045426-1-7
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) re
Externí odkaz:
http://arxiv.org/abs/1109.6916
Publikováno v:
J. Appl. Phys. 109, 093523 (2011)
Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the
Externí odkaz:
http://arxiv.org/abs/1006.1040
Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the b
Externí odkaz:
http://arxiv.org/abs/1002.4717
Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact
Externí odkaz:
http://arxiv.org/abs/0907.4320
Publikováno v:
In Journal of Crystal Growth 15 June 2017 468:870-873
Publikováno v:
In Applied Surface Science 30 January 2017 393:168-179
Publikováno v:
In Journal of Crystal Growth 1 September 2014 401:869-873
Publikováno v:
In Journal of Crystal Growth 1 September 2014 401:30-32
Publikováno v:
In Vacuum January 2014 99:166-174