Low temperature oxidation of SiC preamorphized by ion implantation.

Autor: Poggi, Antonella, Nipoti, Roberta, Solmi, Sandro, Barozzi, Mario, Vanzetti, Lia

Publikováno v: Journal of Applied Physics; 6/1/2004, Vol. 95 Issue 11, p6119-6123, 5p, 6 Graphs

Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process

Autor: Canino, Mariaconcetta, Giannazzo, Filippo, Roccaforte, Fabrizio, Poggi, Antonella, Solmi, Sandro, Raineri, Vito, Roberta Nipoti

Publikováno v: 6th European Conference on Silicon Carbide and Related Materials, pp. 571–574, Newcastle upon Tyne, SEP, 2006
info:cnr-pdr/source/autori:Canino, M; Giannazzo, F ; Roccaforte, F ; Poggi, A ; Solmi, S ; Raineri, V ; Nipoti, R/congresso_nome:6th European Conference on Silicon Carbide and Related Materials/congresso_luogo:Newcastle upon Tyne/congresso_data:SEP, 2006/anno:2007/pagina_da:571/pagina_a:574/intervallo_pagine:571–574
Scopus-Elsevier
ResearcherID

The surface morphology and the electrical activation of P+ implanted 4H-SiC were investigated with respect to annealing treatments that differ only for the heating rate. P+ implantation was carried out in lightly doped n-type epitaxial layers. The im

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::211c527630700307d1e6f25a4d66e01c

Ion Implanted p⁺/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing.

Autor: Nipoti, Roberta, Carnera, Alberto, Bergamini, Fabio, Canino, Mariaconcetta, Poggi, Antonella, Solmi, Sandro, Passini, Mara

Publikováno v: MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-6, 6p

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.