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Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Autor: Chaehwan Jeong, Solbaro Kim, Sangwoo Lim, Jihoon Na, Eunseok Oh, Changheon Kim

Publikováno v: Journal of Sol-Gel Science and Technology. 74:790-799

In-doped ZnO thin films were prepared by a sol–gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high In-doping levels, co-doping wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77273d86d5ea982ad01ee7a4d4190683
https://doi.org/10.1007/s10971-015-3664-x

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Effect of energetic electron beam treatment on Ga-doped ZnO thin films

Autor: Sangwoo Lim, Solbaro Kim, Chaehwan Jeong, Changheon Kim

Publikováno v: Current Applied Physics. 14:862-867

Transparent conductive zinc oxide (ZnO) thin films were synthesized by a sol–gel spin coating method with the addition of Ga(NO 3 ) 3 in a Zn(CH 3 COO) 2 solution and exposed to electron beam treatment. The UV–Vis spectra demonstrated that all of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::168dd543879945307157bb3a90f96f5e
https://doi.org/10.1016/j.cap.2014.03.022

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Selective wet etching of Si3N4/SiO2 in phosphoric acid with the addition of fluoride and silicic compounds

Autor: Sangwoo Lim, Dongwan Seo, Solbaro Kim, Eunseok Oh, Jin Sung Bae

Publikováno v: Microelectronic Engineering. 118:66-71

Various additives were added to H"3PO"4 in order to achieve a highly selective wet etching of Si"3N"4 to SiO"2. Fluoride compounds such as HF, NH"4F, and NH"4HF"2 were added to the H"3PO"4 in order to increase the etch rate of the Si"3N"4. In additio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a3ad759c7acf94103aa1797d2a8e316c
https://doi.org/10.1016/j.mee.2013.12.027

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Effect of energetic electron beam treatment on transparent conductive ZnO thin films

Autor: Chaehwan Jeong, Changheon Kim, Solbaro Kim, Chanhyoung Park, Sangwoo Lim

Publikováno v: Thin Solid Films. 548:263-269

Undoped and Al-doped ZnO thin films were prepared by a sol–gel spin coating method. The films were exposed to the electron beam at different energies to improve their electrical properties by modifying their film crystallinity. For both the undoped

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55d3291cecb2f9db577ef0b92923ecea
https://doi.org/10.1016/j.tsf.2013.10.012

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Synthesis of arsenic-doped p-type ZnO films by addition of As2O3 to the ZnO spin coating solution

Autor: Chanhyoung Park, Sangwoo Lim, Solbaro Kim

Publikováno v: Solid State Communications. 167:18-22

Arsenic-doped ZnO films were prepared by adding As 2 O 3 to sol–gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8cb50dd00e50ee30f1af68613cc52dd
https://doi.org/10.1016/j.ssc.2013.05.012

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Indirect energy transfer of Ce3+ → Eu2+ in CaAl12O19 phosphor

Autor: S.K. Kim, Sun-il Mho, Seung Han Park, H.S. Jeon, Hong-Lee Park, Solbaro Kim

Publikováno v: Solid State Communications. 102:555-559

Photoluminescence characteristics and the energy transfer between Ce3+ and Eu2+ in CaAl12O19 host lattice have been investigated. A series of concentrations of Ce3+ ion with a fixed Eu2+ concentration in doubly doped CaAl12O19 : Ce3+Eu2+ have been st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a40518a47796a02b5fab3771cd3dfab4
https://doi.org/10.1016/s0038-1098(97)00036-7

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