Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Solarzellen und Bauelemente"'
Autor:
Karen Derendorf, V. Klinger, Stephanie Essig, E. Oliva, Simon P. Philipps, Jan Benick, Michael Schachtner, Martin Hermle, Frank Dimroth, Wolfgang Jäger, Tobias Roesener, Gerald Siefer
Publikováno v:
IEEE Journal of Photovoltaics. 3:1423-1428
GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room temperature and leads to a conductive and transparent interface. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51c07589f330527130f4385a03e97802
https://doi.org/10.1109/jphotov.2013.2273097
https://doi.org/10.1109/jphotov.2013.2273097
Autor:
Hirst, L.C., Lumb, M.P., Hoheisel, R., Philipps, S.P., Bett, A.W., Walters, R.J., Bailey, C.G.
In this paper we present detailed balance simulations which determine the material parameters required to produce hot carrier solar cell (HCSC) annual energy yields comparable with that of multi-junction (MJ) systems. We demonstrate that HCSCs are le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::7cdd7c30bc0ba165240bfb4b739481a1
https://publica.fraunhofer.de/handle/publica/235521
https://publica.fraunhofer.de/handle/publica/235521
Autor:
Stephanie Essig, Frank Dimroth
Fast atom beam activated direct wafer bonds can be used to combine GaAs and Si semiconductor structures and to achieve high bond strength and optical transparency. Some applications require a low ohmic resistance between the materials. Therefore, IV-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4c329836f47da651312a6a6ca880ada
https://publica.fraunhofer.de/handle/publica/234393
https://publica.fraunhofer.de/handle/publica/234393
Autor:
Wolfgang Jäger, Rafal E. Dunin-Borkowski, D. Häussler, Frank Dimroth, Mert Kurttepeli, Lothar Houben, Stephanie Essig
Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-juncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c4218e84f47dd4b623a856ca33ac633
https://publica.fraunhofer.de/handle/publica/233387
https://publica.fraunhofer.de/handle/publica/233387
Autor:
C Maurois, A. Wekkeli, A Drouin, B. Ghyselen, P Gergaud, Y. Bogumilowicz, Frank Dimroth, V. Klinger, C Lecouvey, Denis Rouchon, Nicolas Blanc, V. Carron, C. Charles-Alfred, L Benaissa, Alexandra Abbadie
We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e5f8decdb0dd4e93c1d667a34442462
https://publica.fraunhofer.de/handle/publica/231880
https://publica.fraunhofer.de/handle/publica/231880
A procedure to determine the bandgap of a semiconductor material from spectral electrical quantum efficiency measurements is presented. The procedure is based on the disorder-related exponential band tailing at energies below the bandgap, i.e., expon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0560ba2215e2e917036fd749047394f8
https://publica.fraunhofer.de/handle/publica/233294
https://publica.fraunhofer.de/handle/publica/233294
Lattice matched triple-junction solar cells based on the materials Ga0.50In0.50P, Ga0.99In0.01As, and Ge are widely used in space and concentrator applications. In this study, the three subcells of this structure are investigated individually using c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::082984a9ad572bf7db8222c524ab0b48
https://publica.fraunhofer.de/handle/publica/232580
https://publica.fraunhofer.de/handle/publica/232580
A combined electroluminescence and photoluminescence setup for a fast, nondestructive, and high-resolution characterization of large-area lattice matched GaInP2 /Ga(In)As/Ge triple-junction space solar cells was developed. In contrast with electrolum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::e1c86592724a8ab17d475bbbc46c6f45
https://publica.fraunhofer.de/handle/publica/232405
https://publica.fraunhofer.de/handle/publica/232405
Autor:
Hoheisel, R., Bett, A.W.
The transport processes of majority carriers through potential barriers at heterointerface layers of GaAs solar cell structures are experimentally analyzed by optical-injection-dependent and temperature-dependent current-density voltage (J-V) measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::bfa4a371ce460dedc0868fe0eb8f1cc9
https://publica.fraunhofer.de/handle/publica/231004
https://publica.fraunhofer.de/handle/publica/231004
In this work, network simulations using LTSpice (Linear Technology, Milpitas, CA, USA) for monolithic triple-junction solar cells have been performed. In order to simulate the internal structure correctly, the integration of the tunnel diode into the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c52e2ef4c573921298662997db835a89
https://publica.fraunhofer.de/handle/publica/228425
https://publica.fraunhofer.de/handle/publica/228425