Zobrazeno 1 - 10
of 366
pro vyhledávání: '"Solarzellen - Entwicklung und Charakterisierung"'
Publikováno v:
IEEE Journal of Photovoltaics
A new approach to model edge recombination in silicon solar cells is presented. The model accounts for recombination both at the edge of the quasi-neutral bulk as well as at an exposed space-charge-region (SCR), the latter via an edge-length-specific
Publikováno v:
IEEE Journal of Photovoltaics
The applicability of different high (low) work function contact materials for the formation of alternative passivating and hole (electron) selective contacts is currently re-explored for silicon solar cells. To assist the engineering of those contact
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
Scientific Reports
Scientific Reports
Black silicon (b-Si) is currently being adopted by several fields of technology, and its potential has already been demonstrated in various applications. We show here that the increased surface area of b-Si, which has generally been considered as a d
Publikováno v:
Solar Energy Materials and Solar Cells. 173:92-95
As the efficiency of silicon solar cells increases continuously, recombination at the metal contacts becomes more and more limiting, unless the contacts are passivated. Passivating contact layers on the front side, however, usually lead to parasitic
Autor:
Neil R. Wilson, Evangeline C. Wheeler-Jones, James Bullock, Andre C. van Veen, Mohammad Al-Amin, Tim Niewelt, John D. Murphy, Nicholas E. Grant, Ali Javey, Martin C. Schubert
Publikováno v:
IEEE Journal of Photovoltaics, vol 7, iss 6
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation s
Autor:
Wagner, L., Mundt, L.E., Mathiazhagan, G., Mundus, M., Schubert, M.C., Mastroianni, S., Würfel, U., Hinsch, A., Glunz, S.W.
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Scientific Reports
Scientific Reports
Relating crystallization of the absorber layer in a perovskite solar cell (PSC) to the device performance is a key challenge for the process development and in-depth understanding of these types of high efficient solar cells. A novel approach that en
Autor:
Alessandro Inglese, Hele Savin, Henri Vahlman, Marko Yli-Koski, Jonas Schön, Antti Haarahiltunen, Chiara Modanese, Wolfram Kwapil
Publikováno v:
Energy Procedia. 124:188-196
Copper is a common impurity in photovoltaic silicon. While reported to precipitate instantly in n-type Si, copper causes light-induced degradation (Cu-LID) in p-type Si. Recently, partial recovery of Cu-LID was observed after only few minutes of dark
Publikováno v:
Energy Procedia. 124:31-37
The scope of this paper lies on the phenomenon of free-carrier absorption (FCA) in heavily phosphorus-doped poly-Si layers, applied at solar cells featuring poly-Si/SiO x passivating contacts at the rear. Firstly, FCA is investigated on test structur
Autor:
Armin Richter, Yuguo Tao, Andrew M. Tam, Keeya Madani, Young-Woo Ok, Brian Rounsaville, Martin Hermle, Ajeet Rohatgi, Jan Benick, Francesco Zimbardi, Ajay Upadhyaya
Publikováno v:
IEEE Journal of Photovoltaics. 7:1236-1243
This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the bac
Autor:
Sven Kluska, Markus Glatthaar, Fabian Meyer, Andreas Büchler, Jonas Bartsch, Gisela Cimiotti, Andreas Brand
Publikováno v:
Solar Energy Materials and Solar Cells. 166:197-203
Light-induced plating of a Ni-Cu-Ag stack allows for high efficient and potentially low cost solar cell metallization. The definition of the contact structure is performed by local laser ablation of the solar cells surface passivation layer. By using