Výsledky vyhledávání - "Sokolov Nikolai"

Akademický článek

Concept of the 'modified reality' for the sustainable development and environmental technologies

Autor: Ermakov Alexey, Sokolov Nikolai, Fedorov Alexander

Publikováno v: E3S Web of Conferences, Vol 458, p 09005 (2023)

The new concept named “Modified Reality” is discussed in this article. Sustainable development and environmental technologies will be important applications of the proposed concept. The proposed concept is focused on providing services in a user-

Externí odkaz: https://doaj.org/article/4dddc56d3e1549bd98f0072f6608835b

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Akademický článek

Social Risks of International Immigration into Russia

Autor: Borodkina Ol'ga I., Sokolov Nikolai V., Tavrovskii Aleksandr V.

Publikováno v: Economic and Social Changes: Facts, Trends, Forecast, Vol 10, Iss 3, Pp 114-133 (2017)

The article explains the sociological theory of immigration risks. Despite the fact that domestic sociology has been recently attracting more attention to the risk theory, risks of migration processes have not yet been properly considered. According

Externí odkaz: https://doaj.org/article/36a362e41d4d43d59379e70bb99ea6cd

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Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators

Autor: Illarionov, Yury Yu., Knobloch, Theresia, Uzlu, Burkay, Banshikov, Alexander G., Ivanov, Iliya A., Sverdlov, Viktor, Vexler, Mikhail I., Waltl, Michael, Wang, Zhenxing, Manna, Bibhas, Neumaier, Daniel, Lemme, Max C., Sokolov, Nikolai S., Grasser, Tibor

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators

Externí odkaz: http://arxiv.org/abs/2309.11233

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Stabilization of $\varepsilon$-Fe$_2$O$_3$ epitaxial layer on MgO(111)/GaN via an intermediate $\gamma$-Fe$_2$O$_3$-phase

Autor: Ukleev, Victor, Volkov, Mikhail, Korovin, Alexander, Saerbeck, Thomas, Sokolov, Nikolai, Suturin, Sergey

Publikováno v: Phys. Rev. Materials 3, 094401 (2019)

In the present study we have demonstrated epitaxial stabilization of the metastable magnetically-hard $\varepsilon$-Fe$_2$O$_3$ phase on top of a thin MgO(111) buffer layer grown onto the GaN (0001) surface. The primary purpose to introduce a 4\,nm-t

Externí odkaz: http://arxiv.org/abs/1907.11611

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Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators

Autor: Illarionov, Yury Yu., Banshchikov, Alexander G., Polyushkin, Dmitry K., Wachter, Stefan, Knobloch, Theresia, Thesberg, Mischa, Stoeger-Pollach, Michael, Steiger-Thirsfeld, Andreas, Vexler, Mikhail I., Waltl, Michael, Sokolov, Nikolai S., Mueller, Thomas, Grasser, Tibor

Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are scalable

Externí odkaz: http://arxiv.org/abs/1901.10980

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Tunable polymorphism of epitaxial iron oxides in the four-in-one ferroic-on-GaN system with magnetically ordered {\alpha}-, {\gamma}-, {\epsilon}-Fe2O3 and Fe3O4 layers

Autor: Suturin, Sergey, Korovin, Alexander, Gastev, Sergey, Volkov, Mikhail, Tabuchi, Masao, Sokolov, Nikolai

Publikováno v: Phys. Rev. Materials 2, 073403 (2018)

Hybridization of semiconducting and magnetic materials into a single heterostructure is believed to be potentially applicable to the design of novel functional spintronic devices. In the present work we report epitaxial stabilization of four magnetic

Externí odkaz: http://arxiv.org/abs/1712.05632

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