Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Sokolich, Marko"'
Autor:
de Vries, Folkert K., Timmerman, Tom, Ostroukh, Viacheslav P., van Veen, Jasper, Beukman, Arjan J. A., Qu, Fanming, Wimmer, Michael, Nguyen, Binh-Minh, Kiselev, Andrey A., Yi, Wei, Sokolich, Marko, Manfra, Michael J., Marcus, Charles M., Kouwenhoven, Leo P.
Publikováno v:
Phys. Rev. Lett. 120, 047702 (2018)
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We
Externí odkaz:
http://arxiv.org/abs/1709.03727
Autor:
Beukman, Arjan J. A., de Vries, Folkert K., van Veen, Jasper, Skolasinski, Rafal, Wimmer, Michael, Qu, Fanming, de Vries, David T., Nguyen, Binh-Minh, Yi, Wei, Kiselev, Andrey A., Sokolich, Marko, Manfra, Michael J., Nichele, Fabrizio, Marcus, Charles M., Kouwenhoven, Leo P.
Publikováno v:
Phys. Rev. B 96, 241401 (2017)
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and
Externí odkaz:
http://arxiv.org/abs/1704.03482
Autor:
Qu, Fanming, van Veen, Jasper, de Vries, Folkert K., Beukman, Arjan J. A., Wimmer, Michael, Yi, Wei, Kiselev, Andrey A., Nguyen, Binh-Minh, Sokolich, Marko, Manfra, Michael J., Nichele, Fabrizio, Marcus, Charles M., Kouwenhoven, Leo P.
Publikováno v:
Nano Lett., 2016, 16, 7509
Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an al
Externí odkaz:
http://arxiv.org/abs/1608.05478
Autor:
Nguyen, Binh-Minh, Kiselev, Andrey A., Noah, Ramsey, Yi, Wei, Qu, Fanming, Beukman, Arjan J. A., de Vries, Folkert K., van Veen, Jasper, Nadj-Perge, Stevan, Kouwenhoven, Leo P., Kjaergaard, Morten, Suominen, Henri J., Nichele, Fabrizio, Marcus, Charles M., Manfra, Michael J., Sokolich, Marko
Publikováno v:
Phys. Rev. Lett. 117, 077701 (2016)
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitiv
Externí odkaz:
http://arxiv.org/abs/1605.04818
Autor:
Nichele, Fabrizio, Kjaergaard, Morten, Suominen, Henri J., Skolasinski, Rafal, Wimmer, Michael, Nguyen, Binh-Minh, Kiselev, Andrey A., Yi, Wei, Sokolich, Marko, Manfra, Michael J., Qu, Fanming, Beukman, Arjan J. A., Kouwenhoven, Leo P., Marcus, Charles M.
Publikováno v:
Phys. Rev. Lett. 118, 016801 (2017)
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can excee
Externí odkaz:
http://arxiv.org/abs/1605.01241
Autor:
Nichele, Fabrizio, Suominen, Henri J., Kjaergaard, Morten, Marcus, Charles M., Sajadi, Ebrahim, Folk, Joshua A., Qu, Fanming, Beukman, Arjan J. A., de Vries, Folkert K., van Veen, Jasper, Nadj-Perge, Stevan, Kouwenhoven, Leo P., Nguyen, Binh-Minh, Kiselev, Andrey A., Yi, Wei, Sokolich, Marko, Manfra, Michael J., Spanton, Eric M., Moler, Kathryn A.
Publikováno v:
New J. Phys. 18, 083005 (2016)
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from th
Externí odkaz:
http://arxiv.org/abs/1511.01728
Autor:
Yi, Wei, Kiselev, Andrey A., Thorp, Jacob, Noah, Ramsey, Nguyen, Binh-Minh, Bui, Steven, Rajavel, Rajesh D., Hussain, Tahir, Gyure, Mark, Kratz, Philip, Qian, Qi, Manfra, Michael J., Pribiag, Vlad S., Kouwenhoven, Leo P., Marcus, Charles M., Sokolich, Marko
Publikováno v:
Appl. Phys. Lett. 106, 142103 (2015)
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-dop
Externí odkaz:
http://arxiv.org/abs/1503.06710
Autor:
Qu, Fanming, Beukman, Arjan J. A., Nadj-Perge, Stevan, Wimmer, Michael, Nguyen, Binh-Minh, Yi, Wei, Thorp, Jacob, Sokolich, Marko, Kiselev, Andrey A., Manfra, Michael J., Marcus, Charles M., Kouwenhoven, Leo P.
Publikováno v:
Phys. Rev. Lett. 115, 036803 (2015)
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment vi
Externí odkaz:
http://arxiv.org/abs/1502.05714
Publikováno v:
Appl. Phys. Lett. 106, 032107 (2015)
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approa
Externí odkaz:
http://arxiv.org/abs/1412.4817
Autor:
Borselli, Matthew G., Eng, Kevin, Ross, Richard S., Hazard, Thomas M., Holabird, Kevin S., Huang, Biqin, Kiselev, Andrey A., Deelman, Peter W., Warren, Leslie D., Milosavljevic, Ivan, Schmitz, Adele E., Sokolich, Marko, Gyure, Mark F., Hunter, Andrew T.
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual q
Externí odkaz:
http://arxiv.org/abs/1408.0600