Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Soichiro Mitsui"'
Autor:
Soichiro Mitsui, Hideo Kusakabe, Toru Tojo, R. Hayashi, N. Kobayashi, S. Yanaga, Kiminobu Akeno, Shinsuke Nishimura, Munehiro Ogasawara, Mitsuko Shimizu, S. Yasuda
Publikováno v:
Microelectronic Engineering. :337-342
We have developed an environment-proof writing chamber for an electron beam mask writing system. The chamber is made of low thermal expansion metal. The measured size dependence on the chamber temperature is more than one order less than in the case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cbce8415377f46e042d2e4305145feb
https://doi.org/10.1016/s0167-9317(02)00537-3
https://doi.org/10.1016/s0167-9317(02)00537-3
Publikováno v:
Microelectronic Engineering. :17-21
A new X-ray stepper XRA, which is equivalent to β-machine for proximity X-ray lithography (PXL), was installed at ASET Amagasaki-branch, and we have started the evaluation of its performance. The present alignment accuracy using global alignment met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1173d674adedc3f8875de0034bbb471
https://doi.org/10.1016/s0167-9317(01)00529-9
https://doi.org/10.1016/s0167-9317(01)00529-9
Publikováno v:
Microelectronic Engineering. 30:199-202
Deflection of the X-ray mask membrane caused by stepper motion, i.e., changing the mask-to-wafer gap and stepping the wafer parallel to the mask, was evaluated. The effects of film tension, mask configuration and velocity of wafer stage movement on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c771fceec4ba30d0fc67b0d876e1fb19
https://doi.org/10.1016/0167-9317(95)00226-x
https://doi.org/10.1016/0167-9317(95)00226-x
Autor:
Noriaki Nakayamada, Takashi Kamikubo, Ishimura Takiji, Rieko Nishimura, Soichiro Mitsui, Yoshitada Gomi, Seiichi Tsuchiya, Hitoshi Higurashi, Hitoshi Sunaoshi, Hideo Inoue, Hideki Matsui, Kenji Ohtoshi, Shuichi Tamamushi, Kiminobu Akeno, Susumu Oogi, Akinori Mine, Yuichi Tachikawa
Publikováno v:
SPIE Proceedings.
Optical lithography is facing resolution limit. To overcome this issue, highly complicated patterns with high data volume are being adopted for optical mask fabrications. With this background, new electron beam mask writing system, EBM- 7000 is devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef6fd0a63c8cfc505bc1f2ad76468605
https://doi.org/10.1117/12.833462
https://doi.org/10.1117/12.833462
Evaluation of mask soaking performance in the thermal stabilized vacuum chamber in an EB mask writer
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.
In this paper, a new thermally stabilized vacuum chamber with improved soaking efficiency is constructed and its performance is evaluated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd7fe24661dc1488063aa100de08415
https://doi.org/10.1109/imnc.2003.1268597
https://doi.org/10.1109/imnc.2003.1268597
Autor:
Hitoshi Sunaoshi, Hideo Kusakabe, Shusuke Yoshitake, Shinsuke Nishimura, Hirotsugu Wada, Munehiro Ogasawara, Jun Takamatsu, Naoharu Shimomura, Seiichi Tsuchiya, Kiyoshi Hattori, Kiminobu Akeno, Yuuji Fukudome, Soichiro Mitsui, Toru Tojo, Mitsuko Shimizu
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
A stage tracking function has been developed for a mask-scan EB mask writer. Position error of EB mask on an EB-mask-stage induces position error of projection beam on the EB-mask and the position of a writing pattern. The position of the EB-mask is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febe9653f8e34729f446746a3faf9ad6
https://doi.org/10.1117/12.458327
https://doi.org/10.1117/12.458327
Autor:
Fukuda Makoto, Hajime Aoyama, Suzuki Masanori, Hirofumi Morita, Soichiro Mitsui, Akinori Shibayama, Tsuneyuki Haga, Takao Taguchi, Yasuji Matsui, Yukiko Kikuchi
Publikováno v:
SPIE Proceedings.
This article presents the alignment performance of the two-wavelength optical heterodyne alignment system in the x-raystepper XS-1. The alignment accuracy (mean+3) obtained by the double-exposure method with a single mask and a Sitrench wafer was bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e0a4eab7c4c8befee4e1c464680287
https://doi.org/10.1117/12.351120
https://doi.org/10.1117/12.351120
Publikováno v:
Japanese Journal of Applied Physics. 43:3734
A temperature difference between a mask and a writing environment, which occurs during mask loading, is one of the most significant sources of the mask image placement error. The temperature of the mask has to be adjusted in a thermal chamber. To rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80325bc3a579f98172364f0aa676b510
https://doi.org/10.1143/jjap.43.3734
https://doi.org/10.1143/jjap.43.3734
Autor:
Shinji Yanaga, Munehiro Ogasawara, Kiminobu Akeno, Noboru Kobayashi, Shinsuke Nishimura, Mitsuko Shimizu, Toru Tojo, Ryuji Hayashi, Soichiro Mitsui, Hideo Kusakabe
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:2640
Mask-scan strategy for writing large complex patterns such as oblique lines and contact holes with assist bar and serif is more effective for decreasing the number of shots than is variable shaped beam (VSB) strategy and character projection strategy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97d1c2001cfacd4b203a2daa57ca902
https://doi.org/10.1116/1.1521738
https://doi.org/10.1116/1.1521738
Autor:
Hiroaki Sumitani, Takao Taguchi, Soichiro Mitsui, Kiyoshi Fujii, Yasuji Matsui, Muneyoshi Suita, Hajime Aoyama, Hiroshi Watanabe
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:2448
The exposure performance has been evaluated for the new x-ray stepper, the XRA, which is equipped with global alignment and magnification correction systems. Dose uniformity in the exposure field of 3.9%, stage accuracy of less than 20 nm, and good l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4669d9479e7fc835d768709144d0414a
https://doi.org/10.1116/1.1410091
https://doi.org/10.1116/1.1410091