Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Soichi Yamazaki"'
Publikováno v:
Journal of the Japan Society of Powder and Powder Metallurgy. 46:599-603
Rare earth bonded magnets with versatility on shaping and high density, composed of isotropic Nd-Fe-B powder and thermoplastic resin (Nylon-12, PBT and PPS), were developed with warm compression molding.(1) Compounds with magnet powder volume fractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a37275da39d752786f0c3737666270
https://doi.org/10.2497/jjspm.46.599
https://doi.org/10.2497/jjspm.46.599
Publikováno v:
Journal of The Electrochemical Society. 145:2961-2964
The characteristics of the ultrathin Ta 2 O 5 film capacitors with Ru bottom electrodes have been investigated. Ru films are deposited on n-Si by sputtering in 10% O 2 /Ar ambient, for the bottom electrode, and Ta 2 O 5 films are deposited by chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fdb1d4656a2a033b141807e80030156
https://doi.org/10.1149/1.1838745
https://doi.org/10.1149/1.1838745
Autor:
Katsuhiko Hieda, J. Nakahira, Yutaka Ishibashi, T. Kubota, Hiroshi Tomita, Yusuke Kohyama, Masaaki Nakabayashi, Kazuhiro Eguchi, Jun Lin, Mitsuaki Izuha, Kenro Nakamura, Tomonori Aoyama, Yoshiaki Fukuzumi, S. Niwa, Masahiro Kiyotoshi, A. Shimada, K. Hosaka, Koji Tsunoda, M. Asano, Soichi Yamazaki
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Low temperature (600/spl deg/C) (Ba,Sr)TiO/sub 3/ (BST) capacitor process integration (LTB) based on a SrRuO/sub 3/ (SRO) electrode is proposed to achieve gigabit scaled and embedded DRAMs. The BST crystallization temperature is successfully reduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6b204caa28f979594f64c5357726572
https://doi.org/10.1109/iedm.1999.824268
https://doi.org/10.1109/iedm.1999.824268
Autor:
Hiroshi Tomita, Akihiro Kojima, Yusuke Kohyama, M. Satoh, Tsunetoshi Arikado, Yoshiaki Fukuzumi, Kenro Nakamura, Mitsuaki Izuha, Tomonori Aoyama, Y. Tsunashima, Kazuhiro Eguchi, Katsuhiko Hieda, S. Niwa, Soichi Yamazaki, T. Kubota, Masahiro Kiyotoshi, Katsuya Okumura
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
We developed a new in-situ multi-step (IMS) process technology to achieve both conformal step coverage and high dielectric constant for CVD-BST. IMS is a sequential repetition of low temperature CVD of BST and its crystallization in a batch type hot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d3fb5387dc4f2f74059bb4d91ec04a
https://doi.org/10.1109/vlsit.1999.799360
https://doi.org/10.1109/vlsit.1999.799360
Autor:
M. Fukuda, Masaaki Nakabayashi, Hiroshi Tomita, J. Nakahira, C.M. Shiah, D. Matsunaga, Kazuhiro Eguchi, Soichi Yamazaki, T. Suzuki, Masahiro Kiyotoshi, S. Niwa, Koji Tsunoda, Katsuhiko Hieda, C.M. Chu
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
We have developed a cylindrical Ru/ST/Ru capacitor for gigabit-scale DRAMs. Using cylindrical CVD-Ru as a storage node (SN), a new 2-step CVD-ST was employed to improve ST step coverage, surface morphology and to control composition at the Ru/ST inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbe646079dc2b20a1c389826784fbd32
https://doi.org/10.1109/vlsit.2001.934938
https://doi.org/10.1109/vlsit.2001.934938
Autor:
T. Asano, Tsunetoshi Arikado, Katsuya Okumura, Katsuhiko Hieda, K. Hasebe, J. Nakahira, K. Nakao, Soichi Yamazaki, Kazuhiro Eguchi, H. Yamamoto, T. Umehara, Masahiro Kiyotoshi
Publikováno v:
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130).
A hot-wall batch type BST-CVD tool with fast thermal processing (FTP) furnace and individual vaporizing liquid source supply system (ILSS) was developed for uniform deposition of BST. We also employed an in-situ multi-step (IMS) process that is seque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15cdd9412a4ba48d96fdf06e1f47f26
https://doi.org/10.1109/issm.2000.993628
https://doi.org/10.1109/issm.2000.993628
Autor:
Katsuhiko Hieda, Mitsuaki Izuha, Jun Lin, Koji Tsunoda, Tomonori Aoyama, A. Shimada, Hiroshi Tomita, Masaaki Nakabayashi, Soichi Yamazaki, Kazuhiro Eguchi, J. Nakahira, Masahiro Kiyotoshi, S. Niwa
Publikováno v:
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).
We have developed low temperature SrTiO/sub 3/ (ST) capacitor process for embedded DRAM. ST film deposited at 475/spl deg/C was crystallized without additional annealing. 0.53nm SiO/sub 2/ equivalent thickness (teq) ST capacitor with Ru electrodes wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3deb8b2c6c17472d637b792427438e35
https://doi.org/10.1109/vlsit.2000.852787
https://doi.org/10.1109/vlsit.2000.852787
Autor:
Masahiro Kiyotoshi, S. Niwa, Soichi Yamazaki, Kazuhiro Eguchi, C. M. Chu, Masaaki Nakabayashi, Junya Nakahira
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e46240e6ed8879546ac88e8d47abcb
https://doi.org/10.7567/ssdm.2001.b-10-3
https://doi.org/10.7567/ssdm.2001.b-10-3
Autor:
Tsunetoshi Arikado, Hiroshi Tomita, Masahiro Kiyotoshi, Yutaka Ishibashi, Mitsuaki Izuha, Soichi Yamazaki, Syoko Niwa, Tomonori Aoyama, Junya Nakahira, Kazuhiro Eguchi, Kohji Tsunoda, Jun Lin, Katsuya Okumura, Katsuhiko Hieda, Akihiro Shimada, Yoshiaki Fukuzumi, Kenro Nakamura, Yusuke Kohyama, Masaaki Nakabayashi
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac423d3e11ab40e60348acbf00cc6dca
https://doi.org/10.7567/ssdm.1999.a-15-1
https://doi.org/10.7567/ssdm.1999.a-15-1
Autor:
Yutaka Ishibashi, S. Niwa, A. Shimada, Katsuya Okumura, Katsuhiko Hieda, Tsunetoshi Arikado, Yusuke Kohyama, Masaaki Nakabayashi, Jun Lin, Hiroshi Tomita, Tomonori Aoyama, Masahiro Kiyotoshi, Yoshiaki Fukuzumi, Koji Tsunoda, J. Nakahira, Soichi Yamazaki, Kazuhiro Eguchi, Kenro Nakamura, Mitsuaki Izuha
Publikováno v:
MRS Proceedings. 596
We review our capacitor technology using (Ba,Sr)TiO3 (BST) as a capacitor dielectric for dynamic random access memory (DRAM) application. Among a number of issues for BST capacitor process integration in DRAM cells, two important technologies are dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082a2dbb1ee8123f7dcc9857fad3727b
https://doi.org/10.1557/proc-596-3
https://doi.org/10.1557/proc-596-3