Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Soichi Nadahara"'
Autor:
Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Takahiro Kimura, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Osamu Oda, Masaru Hori
Publikováno v:
ACS Omega, Vol 5, Iss 41, Pp 26776-26785 (2020)
Externí odkaz:
https://doaj.org/article/245b6caa49c940b58b51a3d5470b652a
Autor:
Syuhei Yoshimoto, MS, Masayuki Ohara, MS, Shinji Torai, MS, Hiroo Kasamatsu, MS, Jun Ishikawa, PhD, Takahiro Kimura, MS, Soichi Nadahara, PhD, Eiji Kobayashi, MD, PhD
Publikováno v:
Transplantation Direct, Vol 7, Iss 7, p e712 (2021)
Background. Ex vivo perfusion technology has been actively developed to solve the problem of severe donor shortage. In this study, the ex vivo metabolic characteristics of porcine donation after circulatory death (DCD) liver in short-term perfusion u
Externí odkaz:
https://doaj.org/article/70a88cd2ab604238862721811d1fe64a
Autor:
Osamu Oda, Takahiro Kimura, Kazuo Kinose, Shigeru Takatsuji, Masaru Hori, Soichi Nadahara, Akira Horikoshi, Masazumi Nishikawa, Kenji Ishikawa, Akinori Ebe, Atsushi Tanide, Shohei Nakamura
Publikováno v:
ACS Omega, Vol 5, Iss 41, Pp 26776-26785 (2020)
ACS Omega
ACS Omega
The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hyd
Autor:
Shohei Nakamura, Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, Osamu Oda, Masaru Hori
Publikováno v:
Journal of Applied Physics. 133:043302
Damage-free atomic layer etching (ALE) of GaN was demonstrated using a cyclic process in which the chlorinated layer formed by Cl2 plasma exposure was removed by exposure to Ar plasma with energy-controlled ions when the substrate temperature was mai
Publikováno v:
Transplantation Proceedings. 51:1442-1450
Background With recent advances in surgical technologies, minimally invasive endoscopic and robot-assisted surgical procedures have been introduced. However, prolonged warm ischemic time of the kidneys remains a concern after the organ is removed fro
Publikováno v:
Transplantation Proceedings. 51:1463-1467
Background To solve the serious donor shortage, the demand is increasing for developing a new method to use the marginal donors, including donors after cardiac death (DCD). Continuous machine perfusion from ex vivo to in situ is a novel technique to
Autor:
Yukihiro Inomata, Masaki Yoshioka, Soichi Nadahara, Torai Shinji, Takahiro Kimura, Syuhei Yoshimoto, Hidekazu Yamamoto, Eiji Kobayashi, Kasamatsu Hiroo
Publikováno v:
Transplantation proceedings. 53(1)
Background A pig model has been commonly used for technical training for clinical liver transplantation (LT). However, as the healthy pigs have no shunt bypassing the portal vein (PV), it is necessary to complete LT within 30 minutes after shutting o
Autor:
Shigeru Takatsuji, Makoto Sekine, Akira Horikoshi, Shohei Nakamura, Masaru Hori, Soichi Nadahara, Motohiro Kohno, Kazuo Kinose, Kenji Ishikawa, Atsushi Tanide
Publikováno v:
Journal of Vacuum Science & Technology B. 37:021209
Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl2–BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl2, straight sidewall shapes were achieved through BCl3 gas additio
Autor:
Soichi Nadahara, Masazumi Nishikawa, Shigeru Takatsuji, Akira Horikoshi, Motohiro Kohno, Akinori Ebe, Kazuo Kinose, Masaru Hori, Shohei Nakamura, Atsushi Tanide, Kenji Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 58:SAAF04
Autor:
Soichi Nadahara, Jim Snow, Kenichiro Arai, Farid Sebaai, Hiroaki Takahashi, Masanobu Sato, Otsuji Masayuki
Publikováno v:
Solid State Phenomena. 195:42-45
Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation