Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sohya Kudoh"'
Publikováno v:
IEICE Transactions on Electronics. :299-303
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b16bdd18088a61c66c6cf3e91e36cb4
https://doi.org/10.1587/transele.2019fup0001
https://doi.org/10.1587/transele.2019fup0001
Autor:
Shun-ichiro Ohmi, Sohya Kudoh
Publikováno v:
IEICE Transactions on Electronics. :328-333
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07fcca82c7312e05adaf1ef5e6848ed4
https://doi.org/10.1587/transele.e101.c.328
https://doi.org/10.1587/transele.e101.c.328
Autor:
Shun-ichiro Ohmi, Sohya Kudoh
Publikováno v:
Journal of Electronic Materials. 47:961-965
In this study, the formation mechanism of an atomically flat Si(100) surface by annealing in Ar/4%H2 ambient utilizing the quartz furnace and its effect on Hf-based Metal/Oxide/Nitride/Oxide/Si diodes were investigated. After the etching of the unint
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::389cb9fb6a0dafcab8d631d7c28f4c2c
https://doi.org/10.1007/s11664-017-5975-x
https://doi.org/10.1007/s11664-017-5975-x
Publikováno v:
DRC
The high-k $\mathrm{HfN}_{\mathrm{x}}\ (\mathrm{x} > 1.0)$ gate insulator is a promising material for the scaled MOSFET with the ultrathin gate insulator such as the equivalent oxide thickness (EOT) of 0.5 nm or below. We have reported the bilayer $\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed730499a73aeaec7a8b28e3cdcf866
https://doi.org/10.1109/drc46940.2019.9046457
https://doi.org/10.1109/drc46940.2019.9046457
Autor:
Sohya Kudoh, Shun-ichiro Ohmi
Publikováno v:
IEICE Transactions on Electronics. :504-509
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d00eb8d6e72d3e429173bebcc016fd0
https://doi.org/10.1587/transele.e99.c.504
https://doi.org/10.1587/transele.e99.c.504
Autor:
Sohya Kudoh, Shun-ichiro Ohmi
Publikováno v:
DRC
Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type nonvolatile memory (NVM) [1]. Furthermore, the multi-level 2-bit/cell operation is necessary to realize for the high in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4e43d36e8c747ba378965da3b0ddb0
https://doi.org/10.1109/drc.2018.8442216
https://doi.org/10.1109/drc.2018.8442216
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:266-271
Variability improvement of metal-oxide-semiconductor field-effect transistors (MOSFETs) characteristics with high-k HfON gate insulator by Si surface flattening was investigated. The Si surface flattening process was carried out by Ar/4.9%H 2 anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2cd295406d9bbd4c6796d899d380ae1
https://doi.org/10.1109/tsm.2015.2431375
https://doi.org/10.1109/tsm.2015.2431375
Autor:
Shun-ichiro Ohmi, Sohya Kudoh
Publikováno v:
IEICE Transactions on Electronics. :402-405
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e0795e104913b0c2efb20318056af61
https://doi.org/10.1587/transele.e98.c.402
https://doi.org/10.1587/transele.e98.c.402
Autor:
Sohya Kudoh, Shun-ichiro Ohmi
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type non-volatile memory [1]. Even for MONOS memory with high-k gate stacks, such as the in-situ formation of Hf-based MONOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::282a4cb15c6525d853ea2b6ecfef571e
https://doi.org/10.1109/drc.2017.7999432
https://doi.org/10.1109/drc.2017.7999432
Publikováno v:
Japanese Journal of Applied Physics. 59:SCCB02
We have investigated the reduction of process temperature for Si surface flattening process by the annealing in Ar/H2 ambient and its application to Si-on-insulator (SOI) metal-insulator-semiconductor field-effect transistors (MISFETs) with bilayer H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e79fb03d5940f743b2e4190a2fcfecc
https://doi.org/10.7567/1347-4065/ab5173
https://doi.org/10.7567/1347-4065/ab5173