Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sohta Hida"'
Autor:
Satoru Kishida, Sohta Hida, Takahisa Ohno, Takahiro Yamasaki, Kentaro Kinoshita, Takumi Moriyama
Publikováno v:
MRS Advances. 2:229-234
Practical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in polycrystalline metal oxide films. Based on experimental and theoretical results of NiO based ReRAM, we have propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f564a2caf58ffdbd9156dc5d85f1d5e5
https://doi.org/10.1557/adv.2017.7
https://doi.org/10.1557/adv.2017.7
Autor:
Kentaro Kinoshita, Sohta Hida, Satoru Kishida, Takumi Moriyama, Takahiro Yamasaki, Takahisa Ohno
Publikováno v:
Japanese Journal of Applied Physics. 56:04CE12
For the practical use of resistive random access memory (ReRAM), many formation/rupture models of conductive paths are proposed. In this paper, we report both the probability of conductive path formation on grain surfaces and the marked drastic chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fb58b8234f115216f245a1da6e7afe6
https://doi.org/10.7567/jjap.56.04ce12
https://doi.org/10.7567/jjap.56.04ce12
Autor:
Takumi Moriyama, Takahiro Yamasaki, Sohta Hida, Takahisa Ohno, Satoru Kishida, Kentaro Kinoshita
Publikováno v:
Japanese Journal of Applied Physics; Apr2017, Vol. 56 Issue 4S, p1-1, 1p