Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Soheila Eskandari"'
Publikováno v:
IEEE Transactions on Industry Applications. 52:4965-4975
In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid a
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
In the quest for higher power density in switching converters, the use of SiC MOSFETs provides increased switching speed, which allows higher switching frequencies and smaller filtering elements. In order to accurately estimate switching losses in th
A power electronic module or power module is an assembly containing several power components, mostly power semiconductor devices, properly internally interconnected to perform a power conversion function. It is an integrated building block for the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0ae40d9c67765f3594c8e70415d3f4d
https://doi.org/10.1016/b978-0-12-811407-0.00006-4
https://doi.org/10.1016/b978-0-12-811407-0.00006-4
Autor:
Norazlina Abdullah, Mehdi Abolhassani, Haitham Abu-Rub, Ahmed Abu-Siada, Jesus Acero, Khurram K. Afridi, Salman Ahmad, Mohammad S. Alam, Mohammad Ali, Jose Marcos Alonso, Maurício Aredes, Pedro G. Barbosa, Sertac Bayhan, Robert Betz, Frede Blaabjerg, Angus Bryant, Tiago Davi C. Busarello, Adrian Cheok, Martin H.L. Chow, Dariusz Czarkowski, Robson F. daSilva Dias, Francisco K. deAraújo Lima, William C. Dillard, Juan Dixon, Maeve C. Duffy, Adel A.A. Elgammal, Soheila Eskandari, Mohammad Etemadrezaei, José Fernando Silva, Tanya K. Gachovska, Michael Giesselmann, Seyed Ahmad Hamidi, Lei Hao, Jerry L. Hudgins, Shu Yuen (Ron) Hui, William G. Hurley, Zahrul F. Hussien, Atif Iqbal, Syed M. Islam, Shailendra Jain, Baburaj Karanayil, Alireza Khaligh, Iftikhar A. Khan, Yuri Khersonsky, Abdallah Kouzou, Philip T. Krein, Lalit Kumar, Yuk M. Lai, Yim-Shu Lee, Silvangela L.S. Lima Barcelos, Joaquín Vaquero López, Shaikh Moinoddin, Luis Morán, Md Mubashwar Hasan, Kishore N. Mude, Adel Nasiri, Chem V. Nayar, Peyman Niazi, Abdul R. Ofoli, Omer C. Onar, Ziwei Ouyang, Patrick Palmer, Dean Patterson, Kang Peng, David J. Perreault, Sónia F. Pinto, José A. Pomilio, Azlan A. Rahim, Muhammed F. Rahman, Muhammad H. Rashid, Luis Redondo, Chun T. Rim, Mohammad Rizwan Khan, Ariya Sangwongwanich, Enrico Santi, Gilson Santos, Adil Sarwar, Yahya Shakweh, Adel M. Sharaf, Xiaojie Shi, Henry Shu-Hung Chung, Marcelo G. Simões, Vijay K. Sood, Bo Tian, Leon M. Tolbert, Hamid A. Toliyat, Miguel Torres, Andrzej M. Trzynadlowski, Mehmet Uzunoglu, Nimrod Vázquez, Jeziel Vázquez, Huai Wang, Edson H. Watanabe, Bogdan M. Wilamowski, Peter R. Wilson, Yongheng Yang, Subbaraya Yuvarajan, Jun Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44225110ba5c0bb4d77a63c80d3b06a9
https://doi.org/10.1016/b978-0-12-811407-0.09996-7
https://doi.org/10.1016/b978-0-12-811407-0.09996-7
A New Family of Modular Multilevel Converter Based on Modified Flying-Capacitor Multicell Converters
Publikováno v:
IEEE Transactions on Power Electronics. 30:138-147
Modular multilevel converters (MMCs) are one of the next-generation multilevel converters intended for medium/high-voltage high-power market. This paper initially studies a modified topology for flying-capacitor multicell converters (FCMCs) as a modu
Publikováno v:
IET Power Electronics. 7:2969-2987
The aim of this study is to investigate the natural voltage balancing dynamics of the single/three-phase stacked multicell converters (SMCs). First, explicit analytic solutions for switching functions’ implicit equations, which are, utilised in mod
Publikováno v:
2016 IEEE Applied Power Electronics Conference and Exposition (APEC).
In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize th
Publikováno v:
2015 IEEE Energy Conversion Congress and Exposition (ECCE).
In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device jun
Publikováno v:
IECON
The stacked multiceli converter is one of the promising breeds of multilevel converters among the other several modified configurations presented in the literature. The reduced stacked multiceli converter is the most advanced one with less number of