Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Soheil Mobtakeri"'
Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†
Publikováno v:
Hittite Journal of Science and Engineering, Vol 8, Iss 1, Pp 1-5 (2021)
Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as l
Externí odkaz:
https://doaj.org/article/82cbb0a30baa493889c54ed2bee8b8fe
Publikováno v:
ACS Applied Materials & Interfaces. 14:25741-25752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470e408f82601c4b222641b0b90c0fa6
https://doi.org/10.1021/acsami.2c04804
https://doi.org/10.1021/acsami.2c04804
Autor:
Mesut Eryiğit, Soheil Mobtakeri, Eftade Pınar Gür, Elif Temur, Tuba Öznülüer Özer, Ümit Demir, Emre Gür
Publikováno v:
Solar Energy. 234:348-359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8937de7872c0bb5ab0877d5f10e5bc
https://doi.org/10.1016/j.solener.2022.01.030
https://doi.org/10.1016/j.solener.2022.01.030
Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†
Publikováno v:
Volume: 8, Issue: 1 1-5
Hittite Journal of Science and Engineering
Hittite Journal of Science and Engineering
Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3898c816d1ed804e63dff479c8e47a02
https://doi.org/10.17350/hjse19030000206
https://doi.org/10.17350/hjse19030000206
Autor:
Soheil Mobtakeri, Saman Habashyani, Ömer Çoban, Hasan Feyzi Budak, Ahmet Emre Kasapoğlu, Emre Gür
Publikováno v:
Sensors and Actuators B: Chemical. 381:133485
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd3eef3a5b155982644eac62c61c64c
https://doi.org/10.1016/j.snb.2023.133485
https://doi.org/10.1016/j.snb.2023.133485
Publikováno v:
Ceramics International. 47:1721-1727
In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 °C at variable RF power and deposition pressure. The eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a1fc5c8337fd783e56b2a527c443d69
https://doi.org/10.1016/j.ceramint.2020.08.289
https://doi.org/10.1016/j.ceramint.2020.08.289
Publikováno v:
Cumhuriyet Science Journal, Vol 41, Iss 4, Pp 929-937 (2020)
Volume: 41, Issue: 4 929-937
Cumhuriyet Science Journal
Volume: 41, Issue: 4 929-937
Cumhuriyet Science Journal
In the present work, Gallium Oxide (Ga2O3) were deposited as thin films by radio frequency (RF) magnetron sputtering at 300 °C substrate temperature on glass substrate using Ga2O3 target with 99.99% purity. The crystalline structure, morphology, opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e0edf5a6150ad7a7d318d7442a22f5d
https://dergipark.org.tr/tr/pub/csj/issue/58881/780730
https://dergipark.org.tr/tr/pub/csj/issue/58881/780730
Publikováno v:
Electrochimica Acta. 437:141469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fb342c3b4d5d7db22205ee4eff5fa54
https://doi.org/10.1016/j.electacta.2022.141469
https://doi.org/10.1016/j.electacta.2022.141469
Publikováno v:
Diamond and Related Materials
In the present study, ultra-conductive wires were produced by the cascaded Cu/MWCNT wire structure. Cascaded wires were prepared on the industrial 1 mm diameter Cu wire with two steps; Firstly, electrophoretic deposition (EPD) was used to deposit the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61f05cd9abb813c5238caac71f79b33a
https://aperta.ulakbim.gov.tr/record/234764
https://aperta.ulakbim.gov.tr/record/234764
Publikováno v:
2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
WO 3 is known as one of the most important and promising gas sensing materials among the other metal oxides due to their superior sensing performance, low cost, easy to produce and compatibility with modern electronic devices. As the properties of ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4961f60ebf6afa90352f4c3fa456923b
https://doi.org/10.1109/rsm46715.2019.8943547
https://doi.org/10.1109/rsm46715.2019.8943547