Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Sohei Okada"'
Publikováno v:
Polymers, Vol 14, Iss 23, p 5318 (2022)
The polymeric insulation used in nuclear power plants (NPPs) carries the risk of molecular breakage due to oxidation and hydrolysis in the event of an accident. With this in mind, tubular specimens of flame-retardant ethylene-propylene-diene rubber (
Externí odkaz:
https://doaj.org/article/d795920d47e94924801e9dcfb40e6257
Autor:
Koutarou Hayashi, Yuki Fukaya, Sohei Okada, Masaki Maekawa, Takuya Ishimoto, Ayahiko Ichimiya, Atsuo Kawasuso
Publikováno v:
Materials Science Forum. :385-389
Publikováno v:
Radiation Physics and Chemistry. 60:377-380
We have investigated the degradation of optocoupler components, i.e., Si p + –i–n photodiodes and GaAlAs LEDs, under gamma and electron irradiations. The results can be explained with a decrease in the minority carrier lifetime caused by the form
Publikováno v:
Radiation Physics and Chemistry. 60:269-272
To investigate the tolerance of single-event upset (SEU) for GaAs devices, we have measured the transient currents induced in GaAs diodes by energetic heavy particles such as 15 MeV oxygen ions. The measurements were made by combining a focused ion m
Autor:
Toshio Hirao, Hidenobu Mori, Hisayoshi Itoh, Yoshiharu Koizumi, Tsuyoshi Okamoto, Sohei Okada, Shinobu Onoda
Publikováno v:
Radiation Physics and Chemistry. 60:273-276
High-energy heavy-ion microbeams are useful for studying single-event phenomena(SEP) in semiconductor devices. However, current SEP research is concentrating on higher energies provided by cyclotrons. Focusing such high-energy beams is extremely diff
Publikováno v:
Radiation Physics and Chemistry. 60:525-528
A high-energy (1 MeV) pulsed positron beam line has been developed to aim at the application of this system for positron annihilation lifetime spectroscopy (PALS). The performance tests of this beam line were made using an electron beam, and as a res
Effect of radiation damage on luminescence of erbium-implanted SiO2/Si studied by slow positron beam
Publikováno v:
Radiation Physics and Chemistry. 58:615-619
The effect of damage on 1.54 μm luminescence for 30 keV-Er-implanted SiO 2 films has been studied by positron annihilation and cathodoluminescence. It was found that S -parameter in the films decreased after implantation, indicating the suppression
Autor:
Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada, Kazutoshi Kojima, Yuuki Ishida, Masahito Yoshikawa
Publikováno v:
Scopus-Elsevier
Publikováno v:
Materials Science Forum. :51-54
Publikováno v:
Materials Science Forum. :1239-1242