Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Sohei Manabe"'
Publikováno v:
The Journal of the Institute of Image Information and Television Engineers. 55:257-263
A CMOS image sensor with a very-low-leakage photodiode and a low-voltage buried photodiode has been developed that has sensitivity comparable to that of conventional CCD imagers. Photodiode leakage current caused by stress originates in the surface d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1de9e4a0223e4abab97ad8a6293451
https://doi.org/10.3169/itej.55.257
https://doi.org/10.3169/itej.55.257
Autor:
Yoshiyuki Matsunaga, Hiroyuki Tango, Sohei Manabe, Nagataka Tanaka, Nobuo Nakamura, Okio Yoshida
Publikováno v:
IEEE Transactions on Electron Devices. 44:1869-1874
A new single layer electrode two-phase CCD was studied for the purpose of realizing low driving voltage operation in inter-line transfer CCD (IT-CCD) image sensor aiming for low power consumption. Conventional H-CCD with overlapping double layer elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3390d8f19f181cb483d6e0336e276206
https://doi.org/10.1109/16.641354
https://doi.org/10.1109/16.641354
Autor:
Yoshinori Iida, Eiji Oba, A. Furukawa, Hiroyuki Tango, Sohei Manabe, Okio Yoshida, Tetsunori Wada, Hidetoshi Nozaki, Hisanori Ihara
Publikováno v:
Journal of Non-Crystalline Solids. :326-329
Many studies have concentrated on the decrease in a-Si defect density. However, several a-Si image sensors, such as the 2M-pixel charge coupled device (CCD) image sensor, suffer from the following problem: a decrease in defect density causes an incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a88ff76315f9e78008660f5b1d5aa04
https://doi.org/10.1016/0022-3093(96)00157-3
https://doi.org/10.1016/0022-3093(96)00157-3
Autor:
Hidetoshi Nozaki, Okio Yoshida, A. Furukawa, Hiroyuki Tango, Tetsuya Yamaguchi, Yoshinori Iida, Sohei Manabe, Yoshiki Ishizuka
Publikováno v:
Journal of Non-Crystalline Solids. :1017-1020
The a-Si:H films prepared by a laminar flow photo-chemical vapor deposition method were investigated. The Si-H 2 bond content (C SiH2 ) in the a-Si:H film and the relative residual current increased along the gas flow direction. The increases in C Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f752e7c9a13ef18fb06bcd011e54b0c
https://doi.org/10.1016/0022-3093(96)00163-9
https://doi.org/10.1016/0022-3093(96)00163-9
Autor:
Shinji Ohsawa, Sohei Manabe, Yoshiyuki Matsunaga, Michio Sasaki, Nobuo Nakamura, Okio Yoshida, Hiroyuki Tango, Nagataka Tanaka, Hirofumi Yamashita
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 50:234-240
A single-layer metal-electrode CCD image sensor was studied with the purpose of simplifying the steps in the production process with the aim of achieving low-cost sensors and supplressing smear noise. The inter-electrode gap of the single-layer elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df125a73763c4fbfdbfb6373b7cb9a4
https://doi.org/10.3169/itej1978.50.234
https://doi.org/10.3169/itej1978.50.234
Autor:
Yoshiyuki Matsunaga, Michio Sasaki, A. Furukawa, Y. Koya, Naoshi Sakuma, Shinji Ohsawa, Hidetoshi Nozaki, Hiroto Honda, Hirofumi Yamashita, Hisanori Ihara, Ryohei Miyagawa, Sohei Manabe
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:1066-1070
A 2/3-in 400-k pixel-stack-CCD (charge coupled device) image sensor that has bias charge injection into the a-Si layer is described. Because the bias charges fill the deep level traps in advance, image sticking is reduced to imperceptible levels 0.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d047a87ba94552eab22a37b7ee8c22
https://doi.org/10.1109/4.245583
https://doi.org/10.1109/4.245583
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 44:825-832
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1ca3a93e191f6e40342655ddca1e11
https://doi.org/10.3169/itej1978.44.825
https://doi.org/10.3169/itej1978.44.825
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A novel MOS phototransistor with a high optical gain, called a double-gate floating-surface phototransistor, has been proposed and fabricated. The phototransistor realizes a 0.8-electron RMS noise equivalent signal over a 3.58-MHz-wide band. It achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1c677710d3b79b45552eaaeddc04f60
https://doi.org/10.1109/iedm.1988.32755
https://doi.org/10.1109/iedm.1988.32755
Autor:
Sohei Manabe, Hirofumi Yamashita, I. Inoue, Yukio Endo, Yoshiyuki Matsunaga, Ryohei Miyagawa, Nahoko Nohmi, Yoshinori Iida, Hidenori Shibata, Tetsuya Yamaguchi, A. Furukawa
Publikováno v:
1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
A 2 Mpixel two-level CCD (charge-coupled device) image sensor which has no capacitive image lag is discussed. Image lag is reduced to 0.4% and the dynamic range expanded from 72 dB to 110 dB. A schematic diagram of this device is shown. The pixel str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b47f9c81a2a96077f8785d0fe563b19
https://doi.org/10.1109/isscc.1992.200463
https://doi.org/10.1109/isscc.1992.200463
Autor:
N. Harada, M. Abe, Hidenori Shibata, Yukio Endo, Y. Iino, H. Ohtake, Y. Nishida, Sohei Manabe, Yoshiyuki Matsunaga
Publikováno v:
1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
A 160-kpixel 1/3-in CCD (charge coupled device) image sensor is described based on signal charge summation of four pixels, predicted by computer simulation to realize a wide dynamic range. The device, called a preprocessing CCD, has 85 dB dynamic ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd988cb092ccdfa9f2b95757e8d7106c
https://doi.org/10.1109/isscc.1992.200467
https://doi.org/10.1109/isscc.1992.200467