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pro vyhledávání: '"Sohail, Hamza Bin"'
With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower than DRAM
Externí odkaz:
http://arxiv.org/abs/1504.04297
Datacenters running on-line, data-intensive applications (OLDIs) consume significant amounts of energy. However, reducing their energy is challenging due to their tight response time requirements. A key aspect of OLDIs is that each user query goes to
Externí odkaz:
http://arxiv.org/abs/1503.05338
Autor:
Sohail, Hamza Bin
Publikováno v:
Open Access Dissertations
Multi-cores have successfully delivered performance improvements over the past decade; however, they now face problems on two fronts: power and off-chip memory bandwidth. Dennard's scaling is effectively coming to an end which has lead to a gradual i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::478d19bfa1fc97dc35dd74ed6ea4155c
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1518&context=open_access_dissertations
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1518&context=open_access_dissertations
Publikováno v:
Department of Electrical and Computer Engineering Technical Reports
Switch allocation and queuing discipline has a first-order impact on network performance and hence overall system performance. Unfortunately, there is a fundamental tension between quality of switch allocation and clock-speed. On one hand, sophistica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::729a49ab74300829dc8bfccee8d0d7aa
http://docs.lib.purdue.edu/ecetr/451
http://docs.lib.purdue.edu/ecetr/451
Publikováno v:
Department of Electrical and Computer Engineering Technical Reports
With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower than DRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8b57d77f30f7ec82f663d75c880724a
http://docs.lib.purdue.edu/ecetr/428
http://docs.lib.purdue.edu/ecetr/428
Publikováno v:
Department of Electrical and Computer Engineering Technical Reports
Several recent papers argue that due to the slowing down of Dennard’s scaling of the supply voltage future multicore performance will be limited by dark silicon where an increasing number of cores are kept powered down due to lack of power. Customi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::6a6ee6cd9a99737b048fa8d491d615b7
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1435&context=ecetr
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1435&context=ecetr
Statistical Wear Leveling for PCM: Protecting Against the Worst Case Without Hurting the Common Case
Autor:
Sohail, Hamza Bin
Publikováno v:
Department of Electrical and Computer Engineering Technical Reports
Phase change memory (PCM) is emerging as a lead alternative to DRAM due to its good combination of speed, density,energy, and reliability. However, PCM can endure far fewer overwrites than DRAM before wearing out. PCM is susceptible tomalicious or ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::5c7b3328360e859b532eaba42ec5ab5a
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1411&context=ecetr
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1411&context=ecetr