Zobrazeno 1 - 10
of 5 639
pro vyhledávání: '"Soft error"'
Publikováno v:
Nuclear Engineering and Technology, Vol 56, Iss 8, Pp 2916-2922 (2024)
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM c
Externí odkaz:
https://doaj.org/article/df52b849542f47ba986ec1191bca6be6
Autor:
Yudai Kawakami, Makoto Sakai, Hiroaki Masuda, Masami Miyajima, Takao Kanzaki, Kazutoshi Kobayashi, Tatsuya Ohno, Hiroshi Sakurai
Publikováno v:
IEEE Open Journal of Engineering in Medicine and Biology, Vol 5, Pp 157-162 (2024)
Introduction: While carbon ion radiotherapy is highly effective in cancer treatment, it has a high risk of causing soft error, which leads to malfunctions in cardiac implantable electrical devices (CIEDs). To predict the risk of malfunction prior to
Externí odkaz:
https://doaj.org/article/500279b5c78d4ed99f96d474a9052019
Akademický článek
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Publikováno v:
Yuanzineng kexue jishu, Vol 58, Iss 4, Pp 945-951 (2024)
Radiation effect of the device becomes more important with the development of aerospace due to them may change the state or even destroy the device. The major types of the radiation effect include single event effect (SEE), total ionizing dose (TID)
Externí odkaz:
https://doaj.org/article/516846e9d43c4f55b0e228b44fde924f
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2326-2336 (2023)
With the development of semiconductor technology, the size of transistors continues to shrink. In complex radiation environments in aerospace and other fields, small-sized circuits are more prone to soft error (SE). Currently, single-node upset (SNU)
Externí odkaz:
https://doaj.org/article/b2be9a420ce346f1933c29f746615ec6
Publikováno v:
Micromachines, Vol 15, Iss 7, p 885 (2024)
The problem that the conventional double-exponential transient current model (DE model) can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic cell, is solved. Our work uses a new and accurate model for predi
Externí odkaz:
https://doaj.org/article/e3b29946a7c64192b174fbf26ca579a8
Publikováno v:
Micromachines, Vol 15, Iss 4, p 541 (2024)
With the rapid development of semiconductor technology, the reduction in device operating voltage and threshold voltage has made integrated circuits more susceptible to the effects of particle radiation. Moreover, as process sizes decrease, the impac
Externí odkaz:
https://doaj.org/article/1bd9911f2d4e4d458038d5187d015bf5
Publikováno v:
Nuclear Engineering and Technology, Vol 55, Iss 5, Pp 1559-1566 (2023)
This study developed a quasi-monoenergetic neutron source (QMN) for the semiconductor device's soft error rate test (SER). Quasi-monoenergetic neutrons are generated by Be(p,n)B99 nuclear reaction with a 1 mm beryllium target and 30 MeV protons from
Externí odkaz:
https://doaj.org/article/0d61100a7a4a42d78df05e1a863a4825
Publikováno v:
Applied Sciences, Vol 14, Iss 4, p 1470 (2024)
In this paper, we propose Automatic Configuration Memory Fault Injection (ACMFI), a tool that calculates the architectural vulnerability factor (AVF) and soft error rate (SER) using the emulation fault injection technique. SER, which is essential for
Externí odkaz:
https://doaj.org/article/294ef02107404d92967ea842f4bdc723
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2085 (2023)
In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail. The influence of deposited charges on the electric field in the dep
Externí odkaz:
https://doaj.org/article/bbd1b82d405b4429a91e2762214922ae