Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sofie Vogt"'
Publikováno v:
APL Materials, Vol 11, Iss 6, Pp 061122-061122-8 (2023)
Phase-pure α-Ga2O3 thin films with high surface quality and crystallinity have been grown on m-plane sapphire using pulsed laser deposition (PLD). Therefore, the influence of growth temperature, oxygen background pressure, and film thickness on the
Externí odkaz:
https://doaj.org/article/df4a0ae3b577465bb2025924a78d963a
Autor:
Sofie Vogt, Clemens Petersen, Max Kneiß, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann
Structural and electrical properties of undoped and doped amp; 945; amp; 8722;Ga2O3 thin films grown by pulsed laser deposition on m plane sapphire in a two step process are presented. A buffer layer of undoped amp; 945; amp; 8722;Ga2O3 is introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90d43e37ca63193c827c241595e6fe5d
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108419
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108419
Autor:
Marius Grundmann, Zhipeng Zhang, Sofie Vogt, Andreas Thiede, Oliver Lahr, Holger von Wenckstern, Peter Schlupp, Frank Grotjahn
Publikováno v:
IEEE Transactions on Electron Devices. 66:3376-3381
Metal–semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc–tin oxide (ZTO) channel layers. Characteristics of transistors and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18bd1592c3a5bf0b040963a9df66636b
https://doi.org/10.1109/ted.2019.2922696
https://doi.org/10.1109/ted.2019.2922696
Autor:
Thorsten Schultz, Marius Grundmann, Sofie Vogt, Norbert Koch, Peter Schlupp, Holger von Wenckstern
Publikováno v:
Physical Review Applied. 9
Schottky-barrier contacts to amorphous semiconducting oxides are essential building blocks for transparent, flexible, low-cost electronics, but rectification is typically insufficient, unless an oxygen-plasma surface treatment or a reactive depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670158cf326e19ec86f67a41c59b921a
https://doi.org/10.1103/physrevapplied.9.064001
https://doi.org/10.1103/physrevapplied.9.064001
Publikováno v:
Applied Physics Letters. 113:133501
Room temperature fabrication of amorphous oxide semiconductors enables a cost-efficient production of devices on flexible and large-area substrates. Metal-semiconductor field-effect transistors using amorphous zinc-tin-oxide (ZTO) thin films with a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786ee3cfb19f899b8890b15d096ee666
https://doi.org/10.1063/1.5038941
https://doi.org/10.1063/1.5038941