Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sofie Beyne"'
Autor:
Ingrid De Wolf, Herman Oprins, Sofie Beyne, Zsolt Tokei, Olalla Varela Pedreira, Kristof Croes
Publikováno v:
IEEE Transactions on Electron Devices. 66:5278-5283
The electromigration (EM) activation energy ( $\text {E}_{\text {A}}$ ) of alternative metals, such as Ru and Co, was obtained using low-frequency noise (LFN) measurements. High activation energies were expected, but values of ≈1 eV are found, most
A model explaining Lorentzian low-frequency noise spectra observed in electronic interconnects is presented. The model is based on the interaction of electrons with vacancies, whose thermodynamic equilibrium properties determine the temperature depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::767699166e818784cd7dbb893c1f8392
https://lirias.kuleuven.be/handle/123456789/671931
https://lirias.kuleuven.be/handle/123456789/671931
Autor:
Jürgen Bömmels, Zsolt Tokei, Shreya Kundu, Hugo Bender, Shibesh Dutta, Wilfried Vandervorst, Sven Van Elshocht, Christoph Adelmann, Anshul Gupta, G. Jamieson, Christopher J. Wilson, Sofie Beyne
Publikováno v:
IEEE Electron Device Letters. 39:731-734
Co has elicited a strong interest to replace Cu for future interconnect applications in microelectronic circuits due to its potentially lower resistivity and better reliability at scaled dimensions. Here, we demonstrate Co wires with electrical cross
Autor:
L. Arnoldi, K. Croes, O. Varela Pedreira, M. H. van der Veen, Sofie Beyne, Zs. Tokei, I. De Wolf
In this paper we discuss a new EM test methodology, based on low-frequency noise (LFN) measurements. The main advantages of LFN over the standard accelerated EM tests are that they are non-destructive, much faster, closer to operation conditions and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::405980a805dbf0b762b0c8e93798153d
https://lirias.kuleuven.be/handle/123456789/643214
https://lirias.kuleuven.be/handle/123456789/643214
Autor:
Zs. Tőkei, Robert A. Reed, Rong Jiang, Kristof Croes, D. Linten, Simeng E. Zhao, I. DeWolf, En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, Michael L. Alles, Stefano Bonaldo, Pan Wang, Michael W. McCurdy, Sofie Beyne
© 2019 Author(s). 1.8-MeV proton irradiation to a fluence of 10 14 /cm 2 does not significantly affect the resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern microelectronic fabrication techniques used to form m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8c7556a234c8535faf55fac6aa22b1b
https://lirias.kuleuven.be/handle/123456789/638830
https://lirias.kuleuven.be/handle/123456789/638830
Publikováno v:
IRPS
This paper demonstrates the deteriorating electromigration (EM) reliability of Cu interconnects when scaling the metal pitch from 54 to 44nm. The study is carried out using a new EM test method based on low-frequency noise. Both EM lifetime and activ
Autor:
Michele Stucchi, Vladimir Cherman, V. Simons, A. Glabman, K. Croes, Sofie Beyne, Ph. Absil, Herman Oprins, E. Wilcox
Publikováno v:
IRPS
Electromigration mechanisms of W-heaters with Cu connections at each line end to supply the current to the heater were studied. For making reliable lifetime estimates, a temperature profile is proposed based on infra-red (IR) microscopy, electromigra
Autor:
Sofie Beyne, Herman Oprins, Ch. Adelmann, A. Lesniewska, O. Varela Pedreira, Kristof Croes, C. Wu, Christopher J. Wilson, Zs. Tokei, D. Kocaay, Ivan Ciofi, Michele Stucchi, Houman Zahedmanesh
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Reliability challenges of candidate metal systems to replace traditional Cu wiring in future interconnects are discussed. From a reliability perspective, a key opportunity is electromigration improvement: due to their high melting point and slower se
Autor:
Kristof Croes, Olalla Varela Pedreira, Niels Bosman, Shibesh Dutta, Ingrid De Wolf, Sofie Beyne, Christoph Adelmann, Zsolt Tokei
Publikováno v:
IRPS
We show the first electromigration (EM) failures of full ruthenium interconnects with a cross sectional area of 60nm2. The void is observed at the anode, which demonstrates that in p-type metals, such as Ru, the electromigration force acts in the dir
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 111 (8), ⟨10.1063/1.4989898⟩
Applied Physics Letters, American Institute of Physics, 2017, 111 (8), ⟨10.1063/1.4989898⟩
The enhanced electromigration (EM) performance of 20 nm-wide Cu interconnects with a Mn-doped Cu seed and a Mn-based barrier is studied by means of low-frequency (LF) noise measurements and atom probe tomography (APT). While the EM activation energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b5097bcd3ab5d014a16717b64c2bfcb
https://hal.archives-ouvertes.fr/hal-01766131
https://hal.archives-ouvertes.fr/hal-01766131