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Autor:
Saidjafarzoda Ilhom, Adnan Mohammad, Peter Chardavoyne, Sofia Abdari, Dominic Zacharzewski, Martin Niemiec, Necmi Biyikli
Publikováno v:
ECS Meeting Abstracts. :1116-1116
Electrical and Optical Properties of P-type NiO Films Grown via Nickelocene Precursor in a Hollow-Cathode Plasma-ALD Reactor In contrast to the relative abundance of as-grown unintentionally doped n-type semiconductor materials, there are only a few
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44dd491d1032bd89880757e2638a834b
https://doi.org/10.1149/ma2022-02311116mtgabs
https://doi.org/10.1149/ma2022-02311116mtgabs
