Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Soehee Kim"'
Autor:
Jun-Ho Shin, Su-Jin Ahn, Yeong-Taek Lee, Han-Sung Joo, Jung Sunwoo, Jei-Hwan Yoo, Hoe-ju Chung, Yong-Jin Kwon, Jaehwan Kim, Beakhyoung Cho, Jae-Wook Lee, Chang-Soo Lee, Yong-Jun Lee, Mu-Hui Park, Gitae Jeong, Sang-Hoan Chang, Jin-Young Kim, Soehee Kim, Mingu Kang, Duckmin Kwon, Young-Hoon Oh, Kwang-Jin Lee, Qi Wang, Young-don Choi, Yoohwan Rho, Jae-Yun Lee, Ickhyun Song, Hideki Horii, Sooho Cha, Ki-Sung Kim
Publikováno v:
ISSCC
Phase-change random access memory (PRAM) is considered as one of the most promising candidates for future memories because of its good scalability and cost-effectiveness [1]. Besides implementations with standard interfaces like NOR flash or LPDDR2-N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f5ac863917e36ad25b5701fc52bcd26
https://doi.org/10.1109/isscc.2012.6176872
https://doi.org/10.1109/isscc.2012.6176872
Autor:
Choi, Youngdon, Song, Ickhyun, Park, Mu-Hui, Chung, Hoeju, Chang, Sanghoan, Cho, Beakhyoung, Kim, Jinyoung, Oh, Younghoon, Kwon, Duckmin, Sunwoo, Jung, Shin, Junho, Rho, Yoohwan, Lee, Changsoo, Kang, Min Gu, Lee, Jaeyun, Kwon, Yongjin, Kim, Soehee, Kim, Jaehwan, Lee, Yong-Jun, Wang, Qi
Publikováno v:
2012 IEEE International Solid-State Circuits Conference; 1/ 1/2012, p46-48, 3p