Výsledky vyhledávání

Akademický článek

Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

Autor: So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang

Publikováno v: Materials, Vol 15, Iss 3, p 819 (2022)

The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-lay

Externí odkaz: https://doaj.org/article/146265db15f34c6e8c2499314ddb3335

Zobrazit plný text záznamu

Plný text ve formátu HTML

Akademický článek

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence

Autor: Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang

Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)

Abstract In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed an

Externí odkaz: https://doaj.org/article/6a171702f7b849b0ad8648c30f07f5c0

Zobrazit plný text záznamu

Plný text ve formátu HTML

Akademický článek

Agent-Based Conceptual Model of Online Monitoring System, To Improve Pharmaceutical Distribution System

Autor: Ra,min Kangarlou Haghighi, Abbas Toloie Eshlaghy, Mohammad Reza Motadel

Publikováno v: مطالعات مدیریت کسب و کار هوشمند, Vol 10, Iss 38, Pp 267-315 (2021)

The purpose of paper is to present a conceptual model of the IOT-based online monitoring system to improve the distribution system‌‌ of pharmaceutical, using the agent-based modeling approach.First, by reviewing the research literature and interv

Externí odkaz: https://doaj.org/article/a2c6d8c59e2942a8b6abe84ffa7406df

Zobrazit plný text záznamu

Akademický článek

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

Autor: Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang

Publikováno v: Nanomaterials, Vol 12, Iss 19, p 3526 (2022)

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using tech

Externí odkaz: https://doaj.org/article/53113de7cee841eb8e33e3c07ee6fdae

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání