Výsledky vyhledávání - "Snyder, David W."

Report

Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals

Autor: Jo, Seong Soon, Singh, Akshay, Yang, Liqiu, Tiwari, Subodh C., Hong, Sungwook, Krishnamoorthy, Aravind, Sales, Maria Gabriela, Oliver, Sean M., Fox, Joshua, Cavalero, Randal L., Snyder, David W., Vora, Patrick M., McDonnell, Stephen J., Vashishta, Priya, Kalia, Rajiv K., Nakano, Aiichiro, Jaramillo, Rafael

A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$

Externí odkaz: http://arxiv.org/abs/2007.00117

Zobrazit plný text záznamu

Akademický článek

Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology

Autor: Huet, Benjamin, Raskin, Jean-Pierre, Snyder, David W., Redwing, Joan M.

Publikováno v: In Carbon 15 August 2020 163:95-104

Zobrazit plný text záznamu

Report

Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics

Autor: Bresnehan, Michael S., Hollander, Matthew J., Wetherington, Maxwell, Wang, Ke, Miyagi, Takahira, Pastir, Gregory, Snyder, David W., Gengler, Jamie J., Voevodin, Andrey A., Mitchel, William C., Robinson, Joshua A.

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the RMS surface roughness of h-BN films when compared to a high temperature gr

Externí odkaz: http://arxiv.org/abs/1310.1870

Zobrazit plný text záznamu