Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles

Autor: Wennlöf, Håkan, Dannheim, Dominik, Viera, Manuel Del Rio, Dort, Katharina, Eckstein, Doris, Feindt, Finn, Gregor, Ingrid-Maria, Huth, Lennart, Lachnit, Stephan, Mendes, Larissa, Rastorguev, Daniil, Daza, Sara Ruiz, Schütze, Paul, Simancas, Adriana, Snoeys, Walter, Spannagel, Simon, Stanitzki, Marcel, Tomal, Alessandra, Velyka, Anastasiia, Vignola, Gianpiero

The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents

Externí odkaz: http://arxiv.org/abs/2408.00027

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Autor: Rinella, Gianluca Aglieri, Alocco, Giacomo, Antonelli, Matias, Baccomi, Roberto, Beole, Stefania Maria, Blidaru, Mihail Bogdan, Buttwill, Bent Benedikt, Buschmann, Eric, Camerini, Paolo, Carnesecchi, Francesca, Chartier, Marielle, Choi, Yongjun, Colocci, Manuel, Contin, Giacomo, Dannheim, Dominik, De Gruttola, Daniele, Viera, Manuel Del Rio, Dubla, Andrea, di Mauro, Antonello, Donner, Maurice Calvin, Eberwein, Gregor Hieronymus, Egger, Jan, Fabbietti, Laura, Feindt, Finn, Gautam, Kunal, Gernhaeuser, Roman, Glover, James Julian, Gonella, Laura, Grodaas, Karl Gran, Gregor, Ingrid-Maria, Hillemanns, Hartmut, Huth, Lennart, Ilg, Armin, Isakov, Artem, Jones, Daniel Matthew, Junique, Antoine, Kaewjai, Jetnipit, Keil, Markus, Kim, Jiyoung, Kluge, Alex, Kobdaj, Chinorat, Kotliarov, Artem, Kittimanapun, Kritsada, Křížek, Filip, Kucharska, Gabriela, Kushpil, Svetlana, La Rocca, Paola, Laojamnongwong, Natthawut, Lautner, Lukas, Lemmon, Roy Crawford, Lemoine, Corentin, Li, Long, Librizzi, Francesco, Liu, Jian, Macchiolo, Anna, Mager, Magnus, Marras, Davide, Martinengo, Paolo, Masciocchi, Silvia, Mattiazzo, Serena, Menzel, Marius Wilm, Mulliri, Alice, Mylne, Mia Rose, Piro, Francesco, Rachevski, Alexandre, Rasà, Marika, Rebane, Karoliina, Reidt, Felix, Ricci, Riccardo, Daza, Sara Ruiz, Saccà, Gaspare, Sanna, Isabella, Sarritzu, Valerio, Schlaadt, Judith, Schledewitz, David, Scioli, Gilda, Senyukov, Serhiy, Simancas, Adriana, Snoeys, Walter, Spannagel, Simon, Šuljić, Miljenko, Sturniolo, Alessandro, Tiltmann, Nicolas, Trifirò, Antonio, Usai, Gianluca, Vanat, Tomas, Van Beelen, Jacob Bastiaan, Varga, Laszlo, Verdoglia, Michele, Vignola, Gianpiero, Villani, Anna, Wennloef, Haakan, Witte, Jonathan, Wittwer, Rebekka Bettina

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensor

Externí odkaz: http://arxiv.org/abs/2403.08952

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Autor: Schall, Lars, Bespin, Christian, Caicedo, Ivan, Dingfelder, Jochen, Hemperek, Tomasz, Hirono, Toko, Hügging, Fabian, Krüger, Hans, Moustakas, Konstantinos, Pernegger, Heinz, Riedler, Petra, Snoeys, Walter, Wermes, Norbert, Zhang, Sinuo

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the adv

Externí odkaz: http://arxiv.org/abs/2402.12153

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator

Autor: Braach, Justus, Buschmann, Eric, Dannheim, Dominik, Dort, Katharina, Kugathasan, Thanushan, Munker, Magdalena, Snoeys, Walter, Švihra, Peter, Vicente, Mateus

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A, Volume 1056, 2023

Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small coll

Externí odkaz: http://arxiv.org/abs/2306.05938

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Autor: Simancas, Adriana, Braach, Justus, Buschmann, Eric, Chauhan, Ankur, Dannheim, Dominik, Viera, Manuel Del Rio, Dort, Katharina, Eckstein, Doris, Feindt, Finn, Gregor, Ingrid-Maria, Hansen, Karsten, Huth, Lennart, Mendes, Larissa, Mulyanto, Budi, Rastorguev, Daniil, Reckleben, Christian, Daza, Sara Ruiz, Schütze, Paul, Snoeys, Walter, Spannagel, Simon, Stanitzki, Marcel, Velyka, Anastasiia, Vignola, Gianpiero, Wennlöf, Håkan

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact tha

Externí odkaz: http://arxiv.org/abs/2303.18153