Zobrazeno 1 - 10 of 46 pro vyhledávání: '"Smulders, PJM"'
1
Planar MeV ion channeling on strained buried nanofilms
Autor: Selen, LJM, van IJzendoorn, LJ, Smulders, PJM, de Voigt, MJA
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 190:PII S0168-583X(02)00451-2, 570-573. ELSEVIER SCIENCE BV
Planar MeV ion channeling experiments have been used to characterize a buried Si1-xGex film with a thickness of 2.2 nm in a silicon host crystal. The tetragonal deformation in the film shows up as a translation of the {011} planes across the film, wh
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::a7640320cdd9c8570028f54d895accf6
https://research.rug.nl/en/publications/ae6abdfd-4b33-4943-a5a6-aec9370f566d
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2
Planar ion-channeling measurements on buried nano-films
Autor: Selen, LJM, Janssen, FJJ, van IJzendoorn, LJ, de Voigt, MJA, Smulders, PJM, Theunissen, MJJ
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 184(4), 559-568. ELSEVIER SCIENCE BV
Planar MeV ion-channeling measurements on 2.2 nm thick Si1-xGex nano-films buried in Si are presented. The presence of the nano-film leads to a step in the yield of the host crystal in a {0 1 1} planar channeled RBS spectrum. In previous work we show
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::57b656a19d1639771005add19108d43d
https://research.rug.nl/en/publications/ea50fcf9-5915-4c8a-8265-004a3571b0d6
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3
A study of the relationship between spatial and angular coordinates of axially channeled MeV protons
Autor: Breese, MBH, de Kerckhove, DG, Smulders, PJM, Jamieson, DN
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 159(4), 248-253. ELSEVIER SCIENCE BV
Monte Carlo channeling simulations for 3 MeV protons which are transmitted close to the [011] axis of a silicon layer up to 200 nm thick are presented. The emergent angular intensity at different incident tilt angles and layer thicknesses is related
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::8e2f889b626cdb37c475e217d981cc50
https://research.rug.nl/en/publications/5cda56cf-6242-40af-ba09-89c6c0a5ee3e
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4
Direct observation of lattice strain in Si1-xGex/Si crystals using planar channeling patterns
Autor: Breese, MBH, deKerckhove, DG, King, PJC, Smulders, PJM
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 132(1), 177-187. ELSEVIER SCIENCE BV
This paper describes the direct observation of lattice strain in channeling patterns produced by 3 MeV protons transmitted through strained Si1-xGex/Si bilayers close to planar channeling directions. Blocking lines arising from each layer can be sepa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::a346d0295add6e3dacab2016b6acab07
https://research.rug.nl/en/publications/17d8e085-aa87-4729-83d1-9df5ca11ebb2
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5
A study of channeling patterns from strained Si1-xGex/Si bilayers close to (011) axes
Autor: Breese, MBH, Smulders, PJM
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 129(4), 511-518. ELSEVIER SCIENCE BV
This paper characterises the angular intensity distribution of MeV protons transmitted through strained Si1-xGex/Si bilayers close to the axis. The ring-like intensity distribution produced by the front layer axis when it is aligned close to the beam
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::efcdc39929d510ff49718e1b97b78c52
https://research.rug.nl/en/publications/1687a419-0850-4d2f-a273-de58f8cf8527
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6
MBE-growth of iron and iron oxide thin films on MgO(100), using NO2, NO, and N2O as oxidising agents
Autor: Voogt, FC, Hibma, T, Smulders, PJM, Niesen, L, Fujii, T, Schlom, DG, Eom, CB, Hawley, ME, Foster, CM, Speck, JS
Publikováno v: EPITAXIAL OXIDE THIN FILMS III, 211-216
STARTPAGE=211;ENDPAGE=216;TITLE=EPITAXIAL OXIDE THIN FILMS III
We have made a study of the use of NO2 as the source of oxygen in the MBE-growth of iron oxides thin films. It is found that NO2 is a much more efficient oxidising agent than molecular O-2. As indicated by Mossbauer spectroscopy, performed on Fe-57 p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::0ace63c53e124295aa47102c110b30ff
https://research.rug.nl/en/publications/ce6f9129-45bf-4000-a514-86b444582680
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7
RANDOM SPECTRUM FOR THE CHANNELING-BACKSCATTERING TECHNIQUE - A ROTATING AXIAL-DIP STUDY
Autor: DYGO, A, LENNARD, WN, MITCHELL, [No Value], SMULDERS, PJM
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 84(1), 23-30. ELSEVIER SCIENCE BV
The (100) axial channeling dip for a Si single crystal, obtained by averaging over azimuthal angles, is studied experimentally and by Monte Carlo simulation for tilt angles theta up to 16-degrees using a 1.5 MeV energy He-4+ ion beam. Both in the exp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::62d09c271450bcc4e98bd3b3ddb2b2b0
https://research.rug.nl/en/publications/bf789d12-e666-4d25-84e9-729e74a3f2f9
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8
ION-BEAM CHANNELING YIELDS OF HOST AND IMPURITY ATOMS IN LINBO3 - COMPUTER-SIMULATIONS
Autor: REBOUTA, L, SMULDERS, PJM, BOERMA, DO, AGULLOLOPEZ, F, DASILVA, MF, SOARES, JC
Publikováno v: Physical Review. B: Condensed Matter and Materials Physics, 48(6), 3600-3610. AMER PHYSICAL SOC
A Monte Carlo program for the simulation of channeling phenomena in LiNbO3 crystals is described. Results of the program are compared with experimental yields for Nb, Li, and O from angular scans through the [0001], [0221BAR], [0441BAR], and [1120BAR
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::141b721b66c7a3e918407d761e13e7ae
https://research.rug.nl/en/publications/e07723c4-d8bb-48c9-a1f5-046caba3dcac
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9
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10
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