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pro vyhledávání: '"Smith Angeline K"'
The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a microwave ge
Externí odkaz:
http://arxiv.org/abs/1510.05745
Autor:
Umut Arslan, Philip E. Heil, Smith Angeline K, Pedro A. Quintero, Ouellette Daniel G, Juan G. Alzate, Sell Bernhard, Smith Andrew, Fatih Hamzaoglu, M. Seth, Pellegren James, M. Mainuddin, Tahir Ghani, Y. J. Chen, P. Bai, Rownak Jahan, Tanmoy Pramanik, Tofizur Rahman, Liqiong Wei, Justin S. Brockman, Conor P. Puls, P. Hentges, M. Sekhar, Aaron J. Littlejohn, Kevin J. Fischer, Oleg Golonzka, Christopher J. Wiegand, Nilanjan Das
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we discuss array-level MTJ process, performance, and reliability requirements for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled-size MTJ devices capable of meeting L4 Cache specifications across al
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Autor:
Jamali, Mahdi, Zhengyang Zhao, Mahendra DC, Delin Zhang, Hongshi Li, Smith, Angeline K., Jian-Ping Wang
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 13, p133902-1-133902-5, 5p, 4 Graphs
Autor:
Mesut Meterelliyoz, Tahir Ghani, Kevin J. Fischer, O'brien Kevin P, Pellegren James, Dmitri E. Nikonov, J.O Donnell, Chris Connor, Nilanjan Das, P. Nguyen, Smith Andrew, Buford Benjamin, Pedro A. Quintero, P. Hentges, Justin S. Brockman, M. Seth, M. Mainuddin, Philip E. Heil, Smith Angeline K, Brian S. Doyle, Rownak Jahan, Z. Zhang, David L. Kencke, M. Bohr, Liqiong Wei, P. Bai, Tofizur Rahman, M. Lu, Blake C. Lin, M. Sekhar, Conor P. Puls, Kaan Oguz, Joodong Park, A. Selarka, A. Romang, Oleg Golonzka, Christopher J. Wiegand, Juan G. Alzate, Ouellette Daniel G, Umut Arslan, Fatih Hamzaoglu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and
Publikováno v:
Advanced Electronic Materials. 6:1901368
Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic field, which
Autor:
Sachin S. Sapatnekar, Jian-Ping Wang, Zhaoxin Liang, Mahdi Jamali, Mahendra Dc, Meghna G. Mankalale, Smith Angeline K
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
Several emerging spintronic devices have recently been proposed, performing computation by (a) generating spin currents based on input magnet states to switch an output magnet state using Spin-Transfer Torque (STT) [1,2], (b) using multiple nanopilla
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
It has been proposed to use lateral spin valve (LSV) devices for read head applications in magnetic recording. Devices used for read heads such as GMR or MTJ devices typically have complex material stacks and large heights. However, for magnetic reco
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