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A theory is developed to explain the dependence of carrier transport in a thin semiconducting film on film thickness, magnetic field strength, and the dominant bulk scattering mechanism. This theory is based on the solution of the linearized Boltzman
Externí odkaz:
https://digital.library.unt.edu/ark:/67531/metadc330868/
Autor:
Smith, V. Devon, Deering, W. D.
Publikováno v:
Journal of Applied Physics; Jan1982, Vol. 53 Issue 1, p502-506, 5p
Publikováno v:
Proceedings of the 38th Conference: Winter Simulation; 12/ 3/2006, p1324-1331, 8p