In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Autor: Ji, B. L., Li, H., Ye, Q., Gausepohl, S., Deora, S., Veksler, D., Vivekanand, S., Chong, H., Stamper, H., Burroughs, T., Johnson, C., Smalley, M., Bennett, S., Kaushik, V., Piccirillo, J., Rodgers, M., Passaro, M., Liehr, M.

Publikováno v: 2015 IEEE International Memory Workshop(IMW), 17-20 May 2015 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7150290&isnumber=7150256

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-r

Externí odkaz: http://arxiv.org/abs/1509.00070

The ILRI Graduate Fellows Programme: a case study of impact (1978‐1997)

Autor: Eley, R., Ibrahim, H., Hambly, H., Demeke, Mulat, Smalley, M.

Publikováno v: Education + Training, 2003, Vol. 45, Issue 3, pp. 162-174.

Externí odkaz: http://www.emeraldinsight.com/doi/10.1108/00400910310471028

Gametocyte and Gamete Development in Plasmodium falciparum

Autor: Sinden, R. E., Canning, Elizabeth U., Bray, R. S., Smalley, M. E.

Publikováno v: Proceedings of the Royal Society of London. Series B, Biological Sciences, 1978 Jun 01. 201(1145), 375-399.

Externí odkaz: https://www.jstor.org/stable/77352

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The Executive Job Is Kaput.

Autor: Dale Smalley, M.¹ monte.dale.smalley@altria.com

Publikováno v: Industrial & Organizational Psychology. Jun2009, Vol. 2 Issue 2, p173-176. 4p.