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Autor:
Soumendu Datta
Publikováno v:
AIP Advances, Vol 9, Iss 11, Pp 115316-115316-7 (2019)
Structural, mixing vs segregation, and electronic properties of Cd-doped and Cr-doped ultrasmall NiAg nanoclusters have been analyzed here using first principles density functional theory based electronic structure calculations. The optimized structu
Externí odkaz:
https://doaj.org/article/c1703924abb04d909325923ec20c0ffa
Akademický článek
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Autor:
Steven D. Kenny, Miao Yu
Publikováno v:
Thin Solid Films. 584:41-45
Cadmium Telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to do research on how these defects are formed during the growth process, since defects lower the efficiency of solar cells. In thi
Publikováno v:
2015 China Semiconductor Technology International Conference.
At the 28nm technology node, the space between poly line ends becomes narrower due to the requirements for SRAM transistor density. Unfortunately, smaller space may bring many process issues, such as bridge defects. Line end cut (LEC) technology was
Autor:
Lequn Liu, Yongjun Jeff Hu, Ceredig Roberts, Allen McTeer, Shu Qin, Stephen W. Russell, Jixin Yu, Gordon Haller
Publikováno v:
2014 International Workshop on Junction Technology (IWJT).
Toppling during clean process is a general structure issue when we scale down critical dimension (CD)/increase aspect ratio (AR) and density of the nano structures. In this paper, we demonstrated a novel process with CH 4 PLAD (plasma doping) conform
Autor:
V.S. Gurin
Publikováno v:
Solid State Communications. 108:389-392
A few small clusters of the general content Cd x S y and Zn x S y are calculated by ab initio RHF MO LCAO method in the all-electron bases. CdS-based clusters reveal the electronic structure which can be considered as semiconducting CdS with big quan
Autor:
Dantas, Noelio Oliveira
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::19ee5b709a5b4da44ef22d2fc0af3145
Autor:
Hu, Lian1, Wu, Huizhen1
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science. Sep2013, Vol. 210 Issue 9, p1726-1733. 8p.
Conference
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