A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

Autor: Alejandra Castro-Carranza, Oana Moldovan, Slobodan Miljakovic, Benjamin Iniguez, Antonio Cerdeira, Rodrigo Martins, Elvira Fortunato, Magali Estrada, Pedro Barquinha

Publikováno v: Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)

DOI: 10.1016/j.sse.2016.09.011 URL: http://www.sciencedirect.com/science/article/pii/S003811011630140X Filiació URV: SI Inclòs a la memòria: SI An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb7ae31f1c6bd1b89e2fd3c18f96c03a