Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Slipko, V. A."'
Autor:
Slipko, V. A., Pershin, Y. V.
Publikováno v:
Phys. Rev. E 107, 064117 (2023)
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance switching devic
Externí odkaz:
http://arxiv.org/abs/2302.03079
Publikováno v:
Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215709 (2022)
The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - is a well-established subject. The cycle-to-cycle variability of emergi
Externí odkaz:
http://arxiv.org/abs/2201.10121
Autor:
Slipko, V. A., Pershin, Y. V.
Publikováno v:
in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 1, pp. 214-218, Jan. 2022
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or indu
Externí odkaz:
http://arxiv.org/abs/2101.12144
Publikováno v:
Radioengineering 30(1), 157-163 (2021)
Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a master equation for the occupation probabilities of network states [arX
Externí odkaz:
http://arxiv.org/abs/2009.05189
Publikováno v:
Chaos, Solitons & Fractals, Volume 142, 110385 (2021)
The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time
Externí odkaz:
http://arxiv.org/abs/2003.11011
Autor:
Pershin, Y. V., Slipko, V. A.
Publikováno v:
J. Phys. D: Appl. Phys. 52 505304 (2019)
This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are aff
Externí odkaz:
http://arxiv.org/abs/1906.01377
Autor:
Slipko, V. A., Pershin, Y. V.
Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dy
Externí odkaz:
http://arxiv.org/abs/1904.08142
Autor:
Slipko, V. A., Pershin, Y. V.
Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of window function is of significant importance for the predictive modelling
Externí odkaz:
http://arxiv.org/abs/1811.06649
Autor:
Pershin, Y. V., Slipko, V. A.
Publikováno v:
Europhysics Letters 125, 20002 (2019)
It is shown that the time-averaged dynamics of memristors and their networks periodically driven by alternating-polarity pulses may converge to fixed-point attractors. Starting with a general memristive system model, we derive basic equations describ
Externí odkaz:
http://arxiv.org/abs/1808.07947
Autor:
Slipko, V. A., Pershin, Y. V.
Publikováno v:
Phys. Rev. E 96, 062213 (2017)
We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high to low resistance state. It is assumed that the distributions of threshold voltages and switching rates of me
Externí odkaz:
http://arxiv.org/abs/1708.04763