Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Sleziona, Stephan"'
Autor:
Yang, Tao, Huang, Zhipeng, Sleziona, Stephan, Hasselbrink, Eckart, Kratzer, Peter, Schleberger, Marika, Campen, R. Kramer, Tong, Yujin
To take advantage of the exceptional properties of atomically thin transition metal dichalcogenides (TMDC) for advanced devices and catalysts, integration with metallic surfaces is an efficacious approach for facilitating charge carrier injection and
Externí odkaz:
http://arxiv.org/abs/2408.13671
Autor:
Yang, Tao, Sleziona, Stephan, Pollmann, Erik, Hasselbrink, Eckart, Kratzer, Peter, Schleberger, Marika, Campen, R. Kramer, Tong, Yujin
Publikováno v:
Physical Review B 109, L161402 (2024)
Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au, profoundly affec
Externí odkaz:
http://arxiv.org/abs/2310.19657
Autor:
Sleziona, Stephan, Pelella, Aniello, Faella, Enver, Kharsah, Osamah, Skopinski, Lucia, Maas, Andre, Liebsch, Yossarian, Di Bartolomeo, Antonio, Schleberger, Marika
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or
Externí odkaz:
http://arxiv.org/abs/2306.04493
Autor:
Maas, André, Mistry, Kissan, Sleziona, Stephan, Alshehri, Abdullah H., Asgarimoghaddam, Hatameh, Musselman, Kevin, Schleberger, Marika
In this letter we report on the synthesis of monolayers of MoS$_2$ via chemical vapor deposition directly on thin films of Al$_2$O$_3$ grown by spatial atomic layer deposition. The synthesized monolayers are characterized by atomic force microscopy a
Externí odkaz:
http://arxiv.org/abs/2202.06598
Autor:
Schmeink, Jennifer, Musytschuk, Vladislav, Pollmann, Erik, Sleziona, Stephan, Maas, Andre, Schleberger, Marika
Janus monolayer transition metal dichalcogenides, where one of the two chalcogen layers is substituted with a different kind of chalcogen atoms, are pushing the properties of two dimensional materials into new territories. Yet only little is known ab
Externí odkaz:
http://arxiv.org/abs/2112.11211
Autor:
Grillo, Alessandro, Pelella, Aniello, Faella, Enver, Giubileo, Filippo, Sleziona, Stephan, Kharsah, Osamah, Schleberger, Marika, Di Bartolomeo, Antonio
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-
Externí odkaz:
http://arxiv.org/abs/2110.08148
Autor:
Viscardi, Loredana, Durante, Ofelia, De Stefano, Sebastiano, Intonti, Kimberly, Kumar, Arun, Pelella, Aniello, Giubileo, Filippo, Kharsah, Osamah, Daniel, Leon, Sleziona, Stephan, Schleberger, Marika, Di Bartolomeo, Antonio
Publikováno v:
In Surfaces and Interfaces June 2024 49
Autor:
Pelella, Aniello, Grillo, Alessandro, Urban, Francesca, Giubileo, Filippo, Passacantando, Maurizio, Pollmann, Erik, Sleziona, Stephan, Schleberger, Marika, Di Bartolomeo, Antonio
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good m
Externí odkaz:
http://arxiv.org/abs/2008.09910
Akademický článek
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Autor:
Kumar, Arun, Faella, Enver, Durante, Ofelia, Giubileo, Filippo, Pelella, Aniello, Viscardi, Loredana, Intonti, Kimberly, Sleziona, Stephan, Schleberger, Marika, Di Bartolomeo, Antonio
Publikováno v:
In Journal of Physics and Chemistry of Solids August 2023 179